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Product Code M421-1g
Price £240 ex. VAT

BAlq, photochemically stable blue-emitting layer material in OLEDs

Used to improve the efficiency and lifetime of PHOLEDs

Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum, known as BAlq or BAlq3, is widely used as blue-emitting layer materials in organic light-emitting diodes. It is also used as hole-blocking layer or as a “barrier-softening” interfacial layer in between the electron transporting and emissive layers [1, 2, 3, 4].

BAlq is also applied as the host material and electron-transport type hole-blocking layer in red PHOLEDs, and to improve the efficiency and lifetime of PHOLEDs. As a hole-blocking material, it is known to allow for high lifetimes, up to 160,000 hours at a luminance level of 100 cd/m2 [3].

BAlq has a glass transition temperature of 99 °C and is photochemically stable [5].

General Information

CAS number 146162-54-1
Chemical formula C32H25AlN2O3
Molecular weight 512.53 g/mol
Absorption λmax 259 nm (in THF)
Fluorescence λem 334,477 nm (in THF)
HOMO/LUMO HOMO = 5.9 eV, LUMO = 2.9 eV
  • BAlq3
  • Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum
  • Aluminum 4-biphenylolate 2-methyl-8-quinolinolate
Classification / Family

Electron transporting materials, Hole blocking materials, Light emitter layer materials, Phosphorescent host materials, Organic light-emitting diodes, Organic electronics, Sublimed materials

Product Details

Purity >99% (sublimed)
Melting point Melting point/range: 207 - 214 °C (lit.)
Colour Light-yellow powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure

Chemical structure of BAlq
Chemical Structure of Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum (BAlq)

Device Structure(s)

Device structure ITO (110 nm)/NPB(80 nm)/BtpIr*-doped BAlq (47.5 nm)/Alq3(30 nm)/Li2O(0.5nm)/Al(100nm) [5]
Colour red light emitting device Red
Max. EQE 8.6%
Max. Luminance 179 cd/m2
Device structure ITO/CuPc (15 nm)/NPB (80 nm)/NPB: 0.5 wt% DCJTB (20 nm) /Alq3:0.5 wt% C545T (3 nm)/MADN:0.8 wt% DSA-ph*(40 nm)/BAlq3 (10 nm)/LiF/Al [6]
Colour white light emitting device White
Max. Luminance 45,000 cd/m2
Max. Current Efficiency 20.8 cd/A
Max. Power Efficiency 15.9 lm W−1
Device structure ITO/MoOx (5 nm)/NPB (40 nm)/4% Y-Pt*:TCTA (20 nm)/8% FIrpic:mCP(10 nm)/8% FIrpic:UGH2 (10 nm)/BAlq (40 nm)/LiF (0.5 nm)/Al (100 nm) [7]
Colour white light emitting device White
Max. EQE 16.0%
Max. Current Efficiency 45.6 cd/A
Max. Power Efficiency 35.8 lm W−1

*For chemical structure informations please refer to the cited references

Characterisation (TGA and DSC)

dsc/tga balq
TGA and DSC trace of Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum (BAlq).

MSDS Documentation

BAlq MSDSBAlq MSDS sheet

Literature and Reviews

  1. Electroluminescent properties of organic light-emitting diodes using BAlq and Alq3 co-evaporation layer, Y. Iwama et al., Thin Solid Films 499, 364-368 (2006).
  2. Electroluminescent mechanism of organic light-emitting diodes with blue-emitting Alq, T. Itoh et al., Colloids and Surfaces A: Physicochem. Eng. Aspects 284–285, 594–598 (2006).
  3. A host material containing tetraphenylsilane for phosphorescent OLEDs with high efficiency and operational stability, J-W. Kang et al., Org. Electronic, 9, 452–460 (2008).
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