Germanium Diselenide (GeSe2) Powder and Crystals
Low price, high purity 2D metal germanium diselenide powder and crystal
For the development of next-generation electronics, optoelectronics, and nanotechnology
Germanium diselenide (GeSe2) belongs to the group IV layered transition metal dichalcogenides (TMDCs). 2D GeSe2 with a direct wide bandgap (2.74 eV) is of great research interest for its potential applications in ultraviolet (UV) detection. Compared to the bulk structure, the monolayer GeSe2 exhibits the small average effective mass and significant anisotropy in optical absorption, indicating potential optoelectronic applications Photodetectors based on GeSe2 exhibit a highly polarization-sensitive photo response in short wave region due to the optical absorption anisotropy induced by in-plane anisotropy in crystal structure.
Exfoliated GeSe2 nanoflakes also show great stability in ambient air.
We supply low price germanium diselenide in several different forms for a range of applications.
Germanium Diselenide Powder
Can be used for preparation of germanium diselenide nanoplates and ultrathin films
Sold by weight
Germanium Diselenide by Size
Can be used to produce single or few-layer germanium diselenide sheets via mechanical or liquid exfoliation
Small (≥10 mm2) or medium (≥25 mm2) crystals available*
*Typical representative size, areas/dimensions may vary
Bulk single germanium diselenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.
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Germanium diselenide powder can also be used to prepare GeSe2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication).
Key Product Data
- High purity, low price Germanium diselenide
- Available as a powder or as individual crystals
- Can be used to produce single or few-layer sheets
- Free worldwide shipping on qualifying orders
Structure of Germanium Diselenide
GeSe2 crystallizes in the tetragonal I-42d space group. The structure is two-dimensional and consists of two GeSe2 sheets oriented in the (0, 0, 1) direction. Ge4+ is bonded to four equivalent Se2- atoms to form corner-sharing GeSe4 tetrahedra. All Ge–Se bond lengths are 2.40 Å. S2- is bonded in a water-like geometry to two equivalent Ge4+ atoms.
Tetragonal GeSe2 is considered a structure of high symmetry: a GeSe2 monolayer in which all tetrahedra are connected via corners, resulting in a much more ordered arrangement. This structure corresponds to a single slab of the high-pressure, layer-structured, tetragonal HgI2-type phase.
Properties of Germanium Diselenide
After exfoliation of crystals or powder, germanium disulfide typically has the following properties:
- Group IV layered metal dichalcogenides
- Tetragonal (HgI2-type) crystal structure (Space group P4_2/nmc)
- Strong in-plane anisotropy
- Great candidate for both UV detection and energy storage
Germanium Diselenide Applications
Germanium diselenide single crystals can be used to prepare monolayer and few-layer GeSe2 by mechanical or liquid exfoliation. Germanium diselenide powder is suitable for liquid chemical exfoliation to prepare GeSe2 nanosheets and nanoparticles down to few-layer films.
2D GeSe2 is a promising candidate for highly selective polarization-sensitive UV detection and electrode material for batteries in energy storage devices.
Germanium diselenide (GeSe2), a 2D layered metal dichalcogenide with a direct wide bandgap (2.96 eV), is of great interests for its potential applications in ultraviolet (UV) detection due to its excellent workability in the short-wave region. Photo-field effect transistors based on the GeSe2 monolayer show p-type behaviour, high responsivity, superior detectivity, and a fast response time, competitive with state-of-the-art UV detectors
Exhibiting perpendicular optical reversal of the linear dichroism and polarized photodetection under wavelength modulation, 2D GeSe2 is a promising candidate for highly selective polarization-sensitive UV detection.
GeSe2 has also attracted wide attentions due to its distinctive in-plane anisotropic properties originated from the in-plane anisotropic crystal structure, high air stability and excellent performance in polarization-sensitive photodetection. It has been reported that electronic band structure and effective mass of charge carriers are highly sensitive to strains. The strain-engineering properties of GeSe2 give the rise of its applications in novel mechanical-electronic.
Intercalated GeSe2 can also be used for energy storage devices.
Processing Germanium Diselenide
Viscoelastic transfer using PDMS
Literature and Reviews
- Ab initio molecular-dynamics study of the structural, vibrational, and electronic properties of glassy GeSe2, M. Cobb et al., Phys. Rev. B, 54 (17), 12162 (1996); DOI: 10.1103/PhysRevB.54.12162.
- Structural and electronic properties of glassy GeSe2 surfaces, X. Zhang et al., Phys. Rev. B, 62 (23), 15695 (2000); DOI: 10.1103/PhysRevB.62.15695.
- Three-Dimensional Hierarchical GeSe2 Nanostructures for High Performance Flexible All-Solid-State Supercapacitors, X. Wang et al., Adv. Mater., 25 (10), 1479-1486 (2013); DOI: 10.1002/adma.201204063.
- Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region, Y. Yang et al., J. Am. Chem. Soc. 2018, 140, 11, 4150–4156 (2018); DOI: 10.1021/jacs.8b01234.
- Weak Interlayer Interaction in 2D Anisotropic GeSe2, Y. Yang et al., Adv. Sci., 6, 1801810 (2019); DOI: 10.1002/advs.201801810.
- Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers, RSC Adv., 8, 33445 (2018); DOI: 10.1039/c8ra06606j.
- Defects in a Disordered World: The Structure of Glassy GeSe2, I. Petri et al., Phys. Rev. Lett., 84 (11), 2413-2416 (2000); DOI:10.1103/PhysRevLett.84.2413.
- Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film, A. Barik et al., Sci. Rep., 4, 3686 (2013); DOI: 10.1038/srep03686.
- Short-range order of compressed amorphous GeSe2, L. Properzi et al., Sci. Rep., 4, 10188 (2014); DOI: 10.1038/srep10188.
- Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy, X. Zhou et al., Adv. Funct. Mater., 1703858 (2017); DOI: 10.1002/adfm.201703858.
- Network Rigidity in GeSe2 Glass at High Pressure, S. Antao et al., Phys. Rev. Lett., 100, 115501 (2008); DOI: 10.1103/PhysRevLett.100.115501.
- Structure of glassy and liquid GeSe2, P. Salmon et al., J. Phys.: Condens. Matter, 15, S1509–S1528 (2003); DOI: 10.1088/0953-8984/15/16/301.
|Molecular Weight||230.6 g/mol|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Electronic Properties||2D semiconductor|
|Melting Point||707 °C (lit.)
|Synonyms||Germanium(IV) selenide, Bis(selanylidene)germane|
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science|
|M2307A10||Crystal||Small (≥10 mm2)||£620 ea.|
|M2307A25||Crystal||Medium (≥25 mm2)||£1100 ea.|
*typical representative size, areas/dimensions may vary
To the best of our knowledge the information provided here is accurate. However, Ossila assume no liability for the accuracy of this page. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. All products are for laboratory and research and development use only, and may not be used for any other purpose including health care, pharmaceuticals, cosmetics, food or commercial applications.