TSPO1

CAS Number 1286708-86-8

MSDS

TSPO1, fluorescent host or EBL material in TADF-OLED devices

Suitable for efficient electron injection and hole blocking

TSPO1, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, has a structure of triphenylsilane connecting triphenyl phosphine oxide. Comparing with UGH-2, TSPO1 has large permanent dipole moment due to the polar phosphine oxide group and its asymmetric structure.

TSPO1 from Ossila was used in the high-impact paper (IF 14.92), High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence, M. Vasilopoulou et al., Nat. Commun., 12, 4868 (2021); DOI: 10.1038/s41467-021-25135-z.

With a sufficiently high triplet energy (E_T ) of 3.36 eV, TSPO1 can be used as fluorescent host or exciton blocking layer materials in TADF-OLED devices. Also with low lying LUMO (E_LUMO = 2.52 eV) and HOMO (E_HOMO = 6.79 eV), TSPO1 is suitable for efficient electron injection and hole blocking, owing to the electron deficient nature of diphenylphosphine oxide moiety it bears.

General Information

CAS number	1286708-86-8
Full name	Diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide
Chemical formula	C₃₆H₂₉OPSi
Molecular weight	536.67 g/mol
Absorption	λ_max 266 nm in DCM
Photoluminescence	λ_max 322 nm in DCM
HOMO/LUMO	HOMO = 6.79 eV, LUMO = 2.52 eV; E_T = 3.36 eV [1]
Synonyms	Diphenylphosphine oxide-4-(triphenylsilyl)phenyl
Classification / Family	Triphenylsilyl derivatives, Bipolar host materials, Electron Injection layer (EIL) materials, Hole Blocking layer (HBL) materials, Fluorescent host materials, TADF materials, Organic printing electronics.

Product Details

Purity	Sublimed > 99% (HPLC)
Melting point	236 °C (lit.)
Appearance	White crystals/powder

Chemical Structure

tspo1, 1286708-86-8 — Chemical structure of TSPO1, CAS 1286708-86-8

Device Structure(s)

Device structure	ITO/HATCN (7nm)/TAPC (40 nm)/DCDPA (10 nm)/CzCbPy: 20 wt% DMAC-DPS (25 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (1.5 nm)/Al (100 nm) [2]
Color	Deep Blue
Max. Luminance	8,035 cd/m²
Max. Current Efficiency	35.0 cd/A
Max. EQE	22.9%

Device structure	ITO/HATCN (5 nm)/NPB (60 nm)/MCP (5 nm)/15 wt% PXZ-CMO:mCP (30 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (0.5 nm)/Al (150 nm) [3]
Color	Green
Max. Luminance	8,124 cd/m²
Max. Current Efficiency	38.2 cd/A
Max. EQE	12.1%

Device structure	PEDOT:PSS (60 nm)/TAPC (20 nm)/mCP (10 nm)/DPEPO: TmCzTrz (25 nm)/TSPO1 (5 nm)/TPBI (20 nm)/LiF (1 nm)/Al (200 nm) [4]
Color	Blue
Max. Power Efficiency	52.1 Im/W
Max. EQE	25.5%

Device structure	ITO (50 nm)/PEDOT:PSS (60 nm)/poly(9-vinylcarbazole) (15 nm)/SiCz:4CzIPN (30 nm)/TSPO1 (35 nm)/LiF (1 nm)/Al (200 nm) [5]
Color	Green
Max. Power Efficiency	63.4 Im/W
Max. EQE	26%

Device structure	ITO/MoO₃ (2 nm)/TAPC (40 nm)/TCTA (10 nm)/CzSi (3 nm)/CzSi:Pd-B-1* (10%):TTPA (1%) (20 nm)/TSPO1 (10 nm)/TmPyPb (40 nm)/LiF (1.2 nm)/Al (150 nm) [6]
Color	Green
Max Current Efficiency	38.85 cd/A
Max EQE	10.41%
Max. Power Efficiency	38.14 lm W^-1

Device structure	ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2:mCBP(20 nm)/TSPO1* (40 nm)/LiF (1 nm)/Al (100 nm) [7]
Color	Blue
Max. Current Efficiency	21.1 cd/A
Max. EQE	20.2%
Max. Power Efficiency	15.1 lm W⁻¹

Device structure	ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2:mCBP(20 nm)/TSPO1* (40 nm)/LiF (1 nm)/Al (100 nm) [8]
Color	Yellow
Max. Current Efficiency	66.2 cd/A
Max. EQE	23.2%
Max. Power Efficiency	56.2 lm W⁻¹

Device structure	ITO (120 nm)/PEDOT:PSS (60 nm)/TAPC (10 nm)/TCTA (10 nm)/mCP (10 nm)/DPEPO:DMAC-DPS:TBRb (25 nm)/TSPO1 (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al (200 nm) [9]
Color	White
Max Current Efficiency	39.3 cd/A
Max EQE	17.6%
Max. Power Efficiency	41.0 lm W^-1

*For chemical structure information, please refer to the cited references

MSDS Documentation

TSPO1 MSDS sheet

Literature and Reviews

Arylsilanes and siloxanes as optoelectronic materials for organic light-emitting diodes (OLEDs), D. Sun et al., J. Mater. Chem. C, 3, 9496 (2015); DOI: 10.1039/c5tc01638j.
δ-Carboline-based bipolar host materials for deep blue thermally activated delayed fluorescence OLEDs with high efficiency and low roll-off characteristic, J. Moon et al., RSC Adv., 8, 17025 (2018); DOI: 10.1039/c8ra01761a.
Suppressing Efficiency Roll-Off of TADF Based OLEDs by Constructing Emitting Layer With Dual Delayed Fluorescence, Y. Zhang et al., Front. Chem., 7, 302 (2019); doi: 10.3389/fchem.2019.00302.

Design Strategy for 25% External Quantum Efﬁ ciency in Green and Blue Thermally Activated Delayed Fluorescent Devices, D. Lee et al., Adv. Mater. 2015, 27, 5861–5867 (2015); DOI: 10.1002/adma.201502053.
High Efficiency in a Solution-Processed Thermally Activated Delayed-Fluorescence Device Using a Delayed-Fluorescence Emitting Material with Improved Solubility, Y-J. Cho et al., Adv. Mater., 26, 6642–6646 (2014); DOI: 10.1002/adma.201402188.
Highly luminescent palladium(II) complexes with sub-millisecond blue to green phosphorescent excited states. Photocatalysis and highly efficient PSF-OLEDs, P-K. Chow et al., Chem. Sci., 7, 6083-6098 (2016); DOI: 10.1039/C6SC00462H.
High efficiency (~ 100 lm W-1) hybrid WOLEDs by simply introducing ultrathin non-doped phosphorescent emitters in a blue exciplex host, S, Ying et al., J. Mater. Chem. C, 6, 7070 (2018); DOI: 10.1039/c8tc01736k.
Aromatic-Imide-Based Thermally Activated Delayed Fluorescence Materials for Highly Efficient Organic Light-Emitting Diodes, M. Li et al., Angew. Chem. Int. Ed., 56, 8818 –8822 (2017); DOI: 10.1002/anie.201704435.
High efficiency fluorescent white organic light-emitting diodes having a yellow fluorescent emitter sensitized by a blue thermally activated delayed fluorescent emitter, W. Song et al., Org. Electron., 23, 138–143 (2015); doi: 10.1016/j.orgel.2015.04.016.
External Quantum Efficiency Above 20% in Deep Blue Phosphorescent Organic Light‐Emitting Diodes, S. Jeon et al., adv. mater., 23, 1436 (2011); DOI: 10.1002/adma.201004372.

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