TSPO1

TSPO1, fluorescent host or EBL material in TADF-OLED devices

Suitable for efficient electron injection and hole blocking

TSPO1, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, has a structure of triphenylsilane connecting triphenyl phosphine oxide. Comparing with UGH-2, TSPO1 has large permanent dipole moment due to the polar phosphine oxide group and its asymmetric structure.

TSPO1 from Ossila was used in the high-impact paper (IF 14.92), High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence, M. Vasilopoulou et al., Nat. Commun., 12, 4868 (2021); DOI: 10.1038/s41467-021-25135-z.

With a sufficiently high triplet energy (E_T ) of 3.36 eV, TSPO1 can be used as fluorescent host or exciton blocking layer materials in TADF-OLED devices. Also with low lying LUMO (E_LUMO = 2.52 eV) and HOMO (E_HOMO = 6.79 eV), TSPO1 is suitable for efficient electron injection and hole blocking, owing to the electron deficient nature of diphenylphosphine oxide moiety it bears.

General Information

Product Details

Chemical Structure

Device Structure(s)

Device structure	ITO/HATCN (7nm)/TAPC (40 nm)/DCDPA (10 nm)/CzCbPy: 20 wt% DMAC-DPS (25 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (1.5 nm)/Al (100 nm) [2]
Colour	Deep Blue
Max. Luminance	8,035 cd/m2
Max. Current Efficiency	35.0 cd/A
Max. EQE	22.9%

Device structure	ITO/HATCN (5 nm)/NPB (60 nm)/MCP (5 nm)/15 wt% PXZ-CMO:mCP (30 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (0.5 nm)/Al (150 nm) [3]
Colour	Green
Max. Luminance	8,124 cd/m2
Max. Current Efficiency	38.2 cd/A
Max. EQE	12.1%

Device structure	PEDOT:PSS (60 nm)/TAPC (20 nm)/mCP (10 nm)/DPEPO: TmCzTrz (25 nm)/TSPO1 (5 nm)/TPBI (20 nm)/LiF (1 nm)/Al (200 nm) [4]
Colour	Blue
Max. Power Efficiency	52.1 Im/W
Max. EQE	25.5%

Device structure	ITO (50 nm)/PEDOT:PSS (60 nm)/poly(9-vinylcarbazole) (15 nm)/SiCz:4CzIPN (30 nm)/TSPO1 (35 nm)/LiF (1 nm)/Al (200 nm) [5]
Colour	Green
Max. Power Efficiency	63.4 Im/W
Max. EQE	26%

Device structure	ITO/MoO3 (2 nm)/TAPC (40 nm)/TCTA (10 nm)/CzSi (3 nm)/CzSi:Pd-B-1* (10%):TTPA (1%) (20 nm)/TSPO1 (10 nm)/TmPyPb (40 nm)/LiF (1.2 nm)/Al (150 nm) [6]
Colour	Green
Max Current Efficiency	38.85 cd/A
Max EQE	10.41%
Max. Power Efficiency	38.14 lm W-1

Device structure	ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2*:mCBP(20 nm)/TSPO1 (40 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour	Blue
Max. Current Efficiency	21.1 cd/A
Max. EQE	20.2%
Max. Power Efficiency	15.1 lm W−1

Device structure	ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2*:mCBP(20 nm)/TSPO1 (40 nm)/LiF (1 nm)/Al (100 nm) [8]
Colour	Yellow
Max. Current Efficiency	66.2 cd/A
Max. EQE	23.2%
Max. Power Efficiency	56.2 lm W−1

Device structure	ITO (120 nm)/PEDOT:PSS (60 nm)/TAPC (10 nm)/TCTA (10 nm)/mCP (10 nm)/DPEPO:DMAC-DPS:TBRb (25 nm)/TSPO1 (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al (200 nm) [9]
Colour	White
Max Current Efficiency	39.3 cd/A
Max EQE	17.6%
Max. Power Efficiency	41.0 lm W-1

*For chemical structure information, please refer to the cited references

Pricing

MSDS Documentation

TSPO1 MSDS sheet

Literature and Reviews

1. Arylsilanes and siloxanes as optoelectronic materials for organic light-emitting diodes (OLEDs), D. Sun et al., J. Mater. Chem. C, 3, 9496 (2015); DOI: 10.1039/c5tc01638j.
2. δ-Carboline-based bipolar host materials for deep blue thermally activated delayed fluorescence OLEDs with high efficiency and low roll-off characteristic, J. Moon et al., RSC Adv., 8, 17025 (2018); DOI: 10.1039/c8ra01761a.
3. Suppressing Efficiency Roll-Off of TADF Based OLEDs by Constructing Emitting Layer With Dual Delayed Fluorescence, Y. Zhang et al., Front. Chem., 7, 302 (2019); doi: 10.3389/fchem.2019.00302.