Indium (III) Selenide crystal - In2Se3

Order Code: M2136A10
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Size Product code Size description* Quantity (EA) Price
Small M2136A10 >10 mm2 1 £398.1
Medium M2136A25 >25 mm2 1 £636.6

*typical representative size, areas/dimensions may vary

General Information

CAS number 12056-07-4
Chemical formula In2Se3
Molecular weight 466.52 g/mol
Bandgap 1.2 - 3.0 eV [1]
Synonyms Indium (III) Selenide, Diindium triselenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Single crystal
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.999%
Structure Hexagonal 
Electronic properties 2D semiconductor
Melting point 890 °C
Appearance Black crystal

General Description

Indium (III) Selenide, or In2Se3, is an interesting III−VI semiconductor due to its multiple phases and excellent optical properties. α-In2Se3 and β-In2Se3 are semiconducting with a layered 2D structure, and they have been the most-studied phases. Like other TMDC materials, their layers are bound together via weak van der Waals forces, and can thus be exfoliated into thin nano-structures.

However, α-In2Se3 and β-In2Se3 phases share the same rhombohedral crystal structure. The primitive unit cell contains three layers, each consisting of five covalently-bonded, monoatomic sheets in the sequence of Se–In–Se–In–Se. For α-In2Se3, the outer Se-atoms in each layer are aligned, whereas in β-In2Se3 they are located at the interstitial sites of the Se-atoms in the neighbouring layers.

Normally, the β-In2Se3 phase only exists at elevated temperatures in bulk single crystals. However, at room temperature it persists in thin layers. This makes it possible for multi-level phase-change memory in a single material system [2].

 Indium (III) Selenide (In2Se3)crystal structure.


Indium(III) selenide has been of great research interest and extensively studied to explore its applications in solar energy harvesting, nonvolatile phase change memory and optoelectronic devices. In2Se3 is particularly desired for photodetection due to its optimum direct-band gap (1.3 eV), efficient absorption and great photon sensitivity.


Indium (III) selenide is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.


Indium (III) selenide single crystals can be used to prepare monolayer and few-layer In2Se3 by mechanical or liquid exfoliation.

Literature and Reviews

  1. Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3, Adv. Opt. Mater., J. Quereda et al., 14 (12), 1939-1943 (2016); DOI: 10.1002/adom.201600365.
  2. Crystalline–Crystalline Phase Transformation in Two-Dimensional In2Se3 Thin Layers, X. Tao et al., Nano Lett., 13 (8), 3501–3505 (2013); DOI: 10.1021/nl400888p.
  3. Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition, J. Zhou et al., Nano Lett., 15 (10), 6400–6405 (2015); DOI: 10.1021/acs.nanolett.5b01590.
  4. Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets, R. Jacobs-Gedrim et al., ACS Nano, 8 (11), 514–521 (2014); DIO: 10.1021/nn405037s.
  5. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials, W. Ding et al., Nat. Commun., 8:14956 (2017); DOI: 10.1038/ncomms14956.
  6. Room temperature in-plane ferroelectricity in van der Waals In2Se3, C. Zheng et al., Sci. Adv., 4 (7) eaar7720 (2018); DOI: 10.1126/sciadv.aar7720