Indium (III) Selenide Powder and Crystal


Order Code: M2136C1
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Low price, high purity 2D metal indium (III) selenide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Indium (III) selenide (In2Se3) belongs to the A2IIIB3VI family, and it occurs as several different crystal structures and phases (α, β, γ, δ, and κ).  Among those phases, α, β, γ-In2Seare semiconducting in nature with layered structures held together via van der Waals. Strong intra-layer chemical valence bonding and weak inter-layer interactions give rise to highly anisotropic structural, electrical, optical, and mechanical properties. This also makes it possible to obtain 2D In2Senanosheets  by scaling down to few- or mono-layer.

Among them, α-In2Se3 and β-In2Se3 have been the most-studied phases. However, α-In2Se3 and β-In2Se3 phases share the same rhombohedral crystal structure. Normally, the β-In2Se3 phase only exists at elevated temperatures in bulk single crystals. However, at room temperature it persists in thin layers. This makes it possible for multi-level phase-change memory in a single material system

Few-to-monolayer In2Se3 nanosheets can be obtained through liquid exfoliation of high-purity indium (III) selenide powder - In2Se3. 2D nanosheets and nanoparticles are more compatible with conventional micro-fabrication techniques and they are solution-processable. This makes it easier to build complex structures for advanced electronic and optoelectronic devices

We supply low price indium (III) selenide in powder and crystal forms for a range of applications.

Indium (III) selenide powder

Indium (III) selenide powder

Can be used for preparation of indium (III) selenide nanoplates nano-platelets and ultrathinthin films

Sold by weight

≥ 99.995% purity

From £168.00

Indium (III) selenide crystal by size

Indium (III) selenide crystal

Can be used to produce single or few-layer indium (III) selenide sheets via mechanical or liquid exfoliation

Small (≥10mm2) or medium (≥25mm2) crystals available*

≥ 99.999% purity

From £398.00

*Typical representative size, areas/dimensions may vary

Bulk single indium (III) selenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single indium (III) selenide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Indium (III) selenide powder can also be used to prepare In2Se3 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication), especially when it is the case of foreign elements such as lithium or sodium cations being inserted between layers by the process of intercalation. Liquid exfoliation can provide mass production of such products.

Key Product Data

  • High purity, low price indium (III) selenide
  • Available as a powder or as individual crystals
  • Can be used to produce single or few-layer sheets
  • Free worldwide shipping on qualifying orders

Structure and Properties

After exfoliation of crystals or powder, indium (III) selenide typically has the following properties:

  • Rhombohedral structure (space group: R3m)
  • Highly anisotropic structural, electrical, optical, and mechanical properties.
  • α-In2Se3 and β-In2Se3 phases share the same rhombohedral crystal structure
  • α-In2Se3 is the stable form at room temperature and β-In2Se3 phase only exists at elevated temperatures in bulk single crystals

Applications

Indium (III) selenide single crystals can be used to prepare monolayer and few-layer In2Se3 by mechanical or liquid exfoliation. Indium (III) selenide powder is suitable for liquid chemical exfoliation to prepare In2Se3 nanosheets and nanoparticles down to few-layer films. 

Indium(III) selenide has been of great research interest and extensively studied to explore its applications in solar energy harvesting, nonvolatile phase change memory and optoelectronic devices. In2Se3 is particularly desired for photodetection due to its optimum direct-band gap (1.3 eV), efficient absorption and great photon sensitivity. With a layered structure, exfoliated nanosheets from Indium (III) selenide (In2Se3) powder offer new opportunities for practical applications in photovoltaics, photodetectors, capacitors, phase change memory, ionic battery, and chemicals sensory devices.

Technical Data

CAS number ‎12056-07-4
Chemical formula In2Se3
Molecular weight 466.52 g/mol
Bandgap 1.2 - 3.0 eV
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Rhombohedral
Electronic properties 2D semiconductor
Melting point 890 °C
Colour Black
Synonyms Indium (III) Selenide, Diindium triselenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Charge Density Wave (CDW), Hydrogen Revolution Reactions (HER), Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Purity
Indium (III) Selenide Powder ≥ 99.995%
Indium (III) Selenide Crystal ≥ 99.999%

MSDS Documents

Indium (III) selenide powder MSDSIndium (III) selenide powder

Indium (III) selenide crystal MSDSIndium (III) selenide crystal

Structure of Indium (III) Selenide

Indium selenide (In2Se3) belongs to the A2IIIB3VI family, and it occurs as several different crystal structures and phases (α, β, γ, δ, and κ).  Among those phases, α, β, γ-In2Seare semiconducting in nature with layered structures held together via van der Waals. Strong intra-layer chemical valence bonding and weak inter-layer interactions give rise to highly anisotropic structural, electrical, optical, and mechanical properties. This also makes it possible to obtain 2D In2Senanosheets  by scaling down to few- or mono-layer.

α-In2Se3 and β-In2Se3 phases share the same rhombohedral crystal structure. The primitive unit cell contains three layers, each consisting of five covalently-bonded, monoatomic sheets in the sequence of Se–In–Se–In–Se. For α-In2Se3, the outer Se-atoms in each layer are aligned, whereas in β-In2Se3 they are located at the interstitial sites of the Se-atoms in the neighbouring layers.

indium (III) selenide - In2Se3 crystal structure
Top and side view of single-layer indium (III) selenide (In2Se3)

Applications

Indium(III) selenide has been of great research interest and extensively studied to explore its applications in solar energy harvesting, nonvolatile phase change memory and optoelectronic devices. In2Se3 is particularly desired for photodetection due to its optimum direct-band gap (1.3 eV), efficient absorption and great photon sensitivity.

With a layered structure, exfoliated nanosheets from Indium (III) selenide (In2Se3) powder offer new opportunities for practical applications in photovoltaics, photodetectors, capacitors, phase change memory, ionic battery, and chemicals sensory devices.

Processing Indium (III) Selenide

Viscoelastic transfer using PDMS

Video by Ossila

Pricing Table (All)

Form Size/Weight* Product Code Price
Powder 500 mg M2136C1 £168.00
Powder 1 g M2136C1 £269.00
Crystal Small (≥ 10 mm2) M2136A10 £398.00 ea.
Crystal Medium (≥ 25 mm2) M2136A25 £637.00 ea.

*typical representative size, areas/dimensions may vary

Shipping is free for qualifying orders.

Literature and Reviews

  • Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3, Adv. Opt. Mater., J. Quereda et al., 14 (12), 1939-1943 (2016); DOI: 10.1002/adom.201600365.
  • Crystalline–Crystalline Phase Transformation in Two-Dimensional In2Se3 Thin Layers, X. Tao et al., Nano Lett., 13 (8), 3501–3505 (2013); DOI: 10.1021/nl400888p.
  • Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition, J. Zhou et al., Nano Lett., 15 (10), 6400–6405 (2015); DOI: 10.1021/acs.nanolett.5b01590.
  • Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets, R. Jacobs-Gedrim et al., ACS Nano, 8 (11), 514–521 (2014); DIO: 10.1021/nn405037s.
  • Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials, W. Ding et al., Nat. Commun., 8:14956 (2017); DOI: 10.1038/ncomms14956.
  • Room temperature in-plane ferroelectricity in van der Waals In2Se3, C. Zheng et al., Sci. Adv., 4 (7) eaar7720 (2018); DOI: 10.1126/sciadv.aar7720
  • Indium selenide (In2Se3) thin film for phase-change memory, H. Lee et al., Mater. Sci& Eng., B 119, 196–201 (2005); doi: 10.1016/j.mseb.2005.02.060.
  • Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers, B. Krishnan et al., Appl. Surf. Sci., 191(1-4), 138-147 (2002); DOI: 10.1016/S0169-4332(02)00172-1.
  • Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes, D. Wu et al., Nano Lett., 15, 8136−8140 (2015); DOI: 10.1021/acs.nanolett.5b03575.
  • Phototransistor based on single In2Se3 nanosheets, Q. Li et al., Nanoscale, 6, 14538 (2014); DOI: 10.1039/c4nr04404e.
  • High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets, W. Feng et al., Nanotechnology 29, 445205 (2018); doi: 10.1088/1361-6528/aadc73.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.