It looks like you are using an unsupported browser. You can still place orders by emailing us on info@ossila.com, but you may experience issues browsing our website. Please consider upgrading to a modern browser for better security and an improved browsing experience.
I101 perovskite ink has been specially formulated in the Ossila laboratories to be deposited by spin coating. Our I101 perovskite ink is designed for air processing in low-humidity environments. Using a mixture of methyl ammonium iodide (MAI) and lead chloride (PbCl2) dissolved in dimethyl formamide, our I101 perovskite ink will convert to a methylammonium lead halide perovskite under heat. The final product is a methylammonium lead iodide perovskite with trace amounts of chlorine given by the formula CH3NH3PbI3-xClx. For information on the various applications of the mixed halide CH3NH3PbI3-xClx perovskite see our applications section.
The main use of CH3NH3PbI3-xClx is in the fabrication of solar cells, our I101 ink can be used in both standard and inverted architectures; and can achieve power conversion efficiency (PCE) values of over 13% (see our device performance section for more information). The ink specifications can be found below along with complete guides on the processing of perovskite inks for standard architecture and inverted architectures. Using our I101 recipe provided, 5ml of solution is capable of processing up to 160 substrates (1,280 devices using our 8-pixel substrate design).
Specifications
Perovskite Type
CH3NH3PbI3-xClx
Precursor Materials
Methyl Ammonium Iodide (99.9%), Lead Chloride (99.999%)
Precursor Ratio
3:1
Solvent
Dimethyl Formamide (99.8%)
Optical Bandgap
1.56 – 1.59 eV
Energy Levels
Valence Band Minimum 5.4 eV, Conduction Band Minimum 3.9 eV
Emission Peak
770 – 780 nm (PL); 755 – 770 nm (EL)
Standard Architecture PCE
13.7% Peak; 13.0% ±0.25% Average
Inverted Architecture PCE
13.1% Peak; 11.9% ±0.50% Average
Processing Conditions
Air processing; low humidity (20% to 35%)
Packaging
10 x 0.5 ml sealed amber vials; 3 x 10 ml sealed amber vials
I101 Perovskite Applications
Perovskite Photovoltaics
The single biggest application of perovskite materials is for photovoltaic devices; perovskites fabricated from MAI:PbCl precursors have been used in several papers to achieve high power conversion efficiencies. The advantage of using MAI:PbCl as precursor materials is the ability to process in an ambient environment.
Perovskite LED and Lasing
Due to the high photoluminescence quantum yield of perovskites at room temperature, the application of these materials in light-emitting diodes (LEDs) is of great interest. Devices made using MAI:PbCl precursors show strong emission in the near-infrared region at 755 nm. Additionally, recent work has shown lasing within this material.
Scale-Up Processing
Due to the ability to process perovskites based upon MAI:PbCl precursors in air, the material opens up the possibility of applications in large-scale deposition techniques. Several different scalable techniques, such as slot die coating and spray coating have been used to deposit this material.
Below is a condensed summary of our fabrication routine for standard architecture devices using our I101 ink.
FTO etching:
A complete guide to FTO etching can be found on our FTO product page along with an instructional video
Substrate cleaning:
Sonicate FTO for 5 minutes in hot (70 °C) DI water with the addition of 1% Hellmanex
Dump-rinse twice in boiling DI water
Sonicate FTO for 5 minutes in Isopropyl alcohol
Dump-rinse twice in boiling DI water
Dry FTO using filtered compressed gas
Place the FTO into the UV Ozone Cleaner and leave for 10 minutes
Compact TiO2 deposition:
Prepare a solution of titanium diisopropoxide bis(acetylacetonate) at a volumetric percentage of 8% in isopropyl alcohol (approximately 20 ml will be needed)
Mask off the substrates such that only the active area of the devices are exposed
Place the substrates onto a hotplate set to 450 °C
Using a nitrogen/compressed air gun set it to a pressure of 16 – 18 psi and spray the solution onto the substrates. Leave the solution for 30 seconds to dry, and sinter and repeat the spray process again. Repeat this until you get approximately 40 nm of film, this should take around 10 sprays
Cover the substrates loosely with foil and leave to sinter for 30 minutes
After sintering remove the substrates from the hotplate, care should be taken as rapid cooling can shatter the substrate
Mesoporous TiO2 deposition:
Using a mesoporous paste with a particle size of 18 nm and pore size of 30nm, prepare a mesoporous film of approximately 200 nm thick
Place the substrates back on the hotplate, loosely cover with foil and sinter the substrates at 450 °C for 1 hour
After sintering remove the substrates from the hotplate, care should be taken as rapid cooling can shatter the substrate
Perovskite deposition (in air):
Heat I101 ink for at least 2 hours at 70 °C to allow for complete redissolution of solutes
Allow I101 ink to cool to room temperature before deposition
Set the hotplate temperature to 90 °C
Static spin coating: place substrate into spin coater, dispense 30-50 μl and start spinning at 2000 rpm for 30 s
Place substrate onto the hotplate and anneal for 120 minutes
After annealing, transfer the substrates into a glove box environment.
Spiro-OMeTAD deposition (in air):
Prepare the following solutions; Spiro-OMeTAD at a concentration of 97 mg/ml in chlorobenzene, Li-TFSI at a concentration of 175 mg/ml in acetonitrile, and TBP at a volumetric percentage of 46.6% in acetonitrile
Place the substrates inside a desiccator in air and leave the substrates for 12 hours in the dark to allow for oxidation of the spiro-OMeTAD film (The amount of time required for complete oxidation of the spiro-OMeTAD may vary depending upon thickness and environmental conditions. Additional oxidation steps may be needed after deposition of anode)
Using thermal evaporation, deposit an 80 nm layer of gold through a shadow mask to define an active area for your device
Devices do not need to be encapsulated for measuring performance
If encapsulation is desired, the spiro-OMeTAD should be allowed to fully oxidise again before substrates are transferred into the glove box and encapsulated
Below is a condensed summary of our routine, which is also available to download as a PDF to enable you to print and laminate for use in the clean room.
Substrate cleaning:
See substrate cleaning section of standard architecture device guide
Expose to UV radiation (350 nm) for ~5 minutes (times vary depending upon source intensity) to set the epoxy
I101 Device Performance
Below is information on photovoltaic devices fabricated using our standard architecture and inverted architecture recipes for I101 inks. All scans were taken after 10 minutes under illumination of an AM1.5 source, using a voltage sweep from -1.2 V to 1.2 V then from 1.2 V to -1.2 V at a rate of 0.2 V.s-1; no bias soaking was performed on devices.
Architecture
Standard
Inverted
Sweep Direction
Forward
Reverse
Forward
Reverse
Power Conversion Efficiency (%)
13.5
13.7
12.4
13.1
Short Circuit Current (mA.cm-2)
-20.8
-20.8
-18.8
-18.8
Open Circuit Voltage (V)
0.88
0.90
0.96
0.96
Fill Factor (%)
73
73
69
72
References
Perovskite Photovoltaics
Efficient hybrid solar cells based on meso-superstructured organometal halide perovskites. J. Snaith et. al. Science. 338 (2012) 643-647 DOI: 10.1126/science.1228604
Additive enhanced crystallization of solution-processed perovskite for highly efficient planar- heterojunction solar cells. K-Y. Jen et. al. Adv. Mater. 26 (2014) 3748-3754 DOI: 10.1002/adma.201400231
Morphological control for high performance, solution-processed planar heterojunction perovskite solar cells. J. Snaith et. al. 24 (2014) 151-157 DOI: 10.1002/adfm.201302090
Perovskite LED and Lasing
Bright light-emitting diodes based on organometal halide perovskite. R. H. Friend et. al. Nature Nanotechnology, 9 (2014) 687-692 doi:10.1038/nnano.2014.149
Interfacial control towards efficient and low-voltage perovskite light-emitting diodes. Hang et. al. Adv. Mater. 27 (2015) 2311-2316 DOI: 10.1002/adma.201405217
High photoluminescence efficiency and optically pumped lasing in solution-processed mixed halide perovskite semiconductors. H. Friend et. al. J. Phys. Chem. Lett. 5 (2014)1421-1426 DOI: 10.1021/jz5005285
Scale-Up Processing
Upscaling of perovskite solar cells: Fully ambient roll processing of flexible perovskite solar cells with printed back electrodes. C. Krebs et. al. Adv. Energy Mater. 5 (2015) 1500569 DOI: 10.1002/aenm.201500569
Highly efficient, felixble, indium-free perovskite solar cells employing metallic substrates, M. Watson et. al. J. Mater. Chem. A, 3 (2015) 9141-9145 DOI: 10.1039/C5TA01755F
Efficient planar heterojunction mixed-halide perovskite solar cells deposited via spray-deposition. G. Lidzey et. al. Energy Environ. Sci. 7 (2014) 2944-2950 DOI: 10.1039/C4EE01546K
The Ossila website uses cookies for core functionality. By continuing to browse the website you consent to the use of these cookies.More Information
Online orders to can only be placed in . For other payment methods, request a quote or send a purchase order to info@ossila.com to purchase via offline channels.