Hafnium Disulfide (HfS2) Powder and Crystal

CAS Number 18855-94-2

2D Materials, Low Dimensional Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)

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Hafnium Disulfide (HfS2) Powder and Crystal CAS 18855-94-2

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Low price, high purity 2D hafnium disulfide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Technical Data | MSDS | Literature and Reviews | Related Products

Hafnium disulfide (HfS₂), CAS number 18855-94-2, is layered 2D semiconducting material that is part of the group IV transition metal dichalcogenides (TMDCs). Hafnium disulfide is a semiconductor with an indirect band gap of ~ 2.0 eV. Single layers of HfS₂ are predicted to have a direct band gap of ~1.2 eV.

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Powder & Crystals

Available in powder and crystal forms

Hafnium disulfide (HfS₂) powder has a layered structure. Each layer is bound by weak van der Waals forces. Ultra-thin films of HfS₂ can be chemically-exfoliated from its layered bulk powder form. HfS₂crystallises with octahedral metal coordination in the 1T polytype. 1T-HfS₂is semiconducting in nature. Ultrathin HfS₂ shows a higher, faster response and higher stability than most other two-dimensional materials. However, the 1T-HfS₂ monolayer system undergoes a semiconductor-to-metal transition while compressive strain is applied.

We supply low price hafnium disulfide in several different forms for a range of applications.

Hafnium Disulfide Powder

Can be used for preparation of hafnium disulfide nanoplates and ultrathin films

Available in quantities of 1g

≥ 99.995% purity

From £350

Hafnium Sulfide Crystals by Size

Can be used to produce single or few-layer hafnium disulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) crystal available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary.

Bulk single hafnium disulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single hafnium disulfide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Few-layer HfS₂ nanosheets and nanoparticles can also obtained from hafnium disulfide powder by liquid-exfoliation.

Structure of Hafnium Disulfide

Hafnium disulfide (HfS₂)adopts the CdI₂ structure (1T structure) with a single-layer plane of hexagonal close-packed Hf atoms sandwiched by two-layer planes of hexagonal close-packed S atoms. The layers are stacked together by weak van der Waals (vdW) interactions, and can be exfoliated into thin 2D layers.

hafnium sulfide - HfS2 - crystal structure — The crystal structure of single-layer hafnium disulfide (HfS₂)

Technical Data

CAS Number	‎18855-94-2
Chemical Formula	HfS₂
Molecular Weight	242.62 g/mol
Bandgap	~2.0 eV (indirect), ~1.2 eV (direct)
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	‎Octahedral (1T)
Electronic Properties	2D Semiconductor
Melting Point	N/A
Colour	Dark brown
Synonyms	Hafnium sulfide
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form	Purity
Powder	≥99.995%
Crystal	≥99.999%

Pricing Table

Product Code	Form	Size/Weight*	Price
M2152C1	Powder	1 g	£350
M2152A10	Crystal	Small (≥10 mm²)	£520 ea.

*typical representative size, areas/dimensions may vary.

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MSDS Documents

Hafnium disulfide powder

Hafnium disulfide crystal

Properties of Hafnium Disulfide

After exfoliation of hafnium disulfide crystal or powder, hafnium disulfide typically has the following properties:

‎Octahedral (1T, space group: P3m1)
Group IV transition metal dichalcogenides (TMDCs)
Hafnium disulfide is a semiconductor with an indirect band gap of ~ 2.0 eV. Single layers of HfS₂ are predicted to have a direct band gap of ~1.2 eV
1T-HfS₂is semiconducting in nature
1T-HfS₂ monolayer system undergoes a semiconductor-to-metal transition while compressive strain is applied

Applications of Hafnium Disulfide

Hafnium disulfide (HfS₂) single crystals can be used to prepare monolayer and few-layer HfS₂ by mechanical or liquid exfoliation.

Hafnium disulfide powder is suitable for liquid chemical exfoliation to prepare HfS₂ nanosheets and nanoparticles down to few-layer films.

Hafnium disulfide based field-effect transistors (FETs) can have sheet current densities of up to 650 μA μm⁻¹ (about 85 times higher than that of MoS₂), making HfS₂ an attractive candidate for applications in logic and optoelectronic devices. Exfoliated few-layer HfS₂ has also been built into ultra-sensitive photo-transistors and high-performance FETs.

Exfoliated ultra-thin films of HfS₂have an indirect bandgap of ~ 1.2 eV, with high stability against surface degradation. FET based on HfS₂nanosheets gave a high current on/off ratio over 10,000 at room temperature. Photodetectors based on HfS₂nanosheets provide high photosensitivity to 405 nm lasers, with a large on/off ratio of ca. 10³ and ultrafast response performance (with rise and fall times of 24 ms).

2D-HfS₂ can also be used as an efficient photocatalyst for water splitting, with a strong absorption mainly in the visible and ultraviolet regions.

Literature and Reviews

Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors, D. Wang et al., Chem. Mater.,30, 3819−3826 (2018); DOI: 10.1021/acs.chemmater.8b01091.
Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors, X. Nie et al., ACS Appl. Mater. Interfaces, 9, 26996−27003 (2017); DOI: 10.1021/acsami.7b06160.
2D-HfS2 as an efficient photocatalyst for water splitting, D. Singh et al., Catal. Sci. Technol., 6, 6605–6614 (2016); DOI: 10.1039/c6cy01172a.

Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures, B. Wang et al., RSC Adv., 8, 18889 (2018); DOI: 10.1039/c8ra03047b.
Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors, L. Fu et al., Adv. Mater., 29, 1700439 (2017); DOI: 10.1002/adma.201700439.
Valence and conduction band states of HfS2: From bulk to a single layer, C. Kreis et al., Phys. Rev. B, 68, 235331 ~2003!; DOI: 10.1103/PhysRevB.68.235331.
High-yield synthesis and liquid-exfoliation of twodimensional belt-like hafnium disulphide, H. Kaur et al., Nano Res., 11(1): 343–353 (2018); doi: 10.1007/s12274-017-163.
Vertically oriented few-layered HfS2 nanosheets: growth mechanism and optical properties, B. Zheng et al., 2D Mater., 3, 035024 (2016); doi:10.1088/2053-1583/3/3/035024.
Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures, B. Wang et al., RSC Adv., 8, 18889 (2018); DOI: 10.1039/c8ra03047b.
Few-layer HfS2 transistors, T. Kanazawa et al., Sci. Rep., 6, 22277 (2015); DOI: 10.1038/srep22277.
Ultrasensitive Phototransistors Based on Few-Layered HfS2, K. Xu et al., Adv. Mater., 27, 7881–7887 (2015); DOI: 10.1002/adma.201503864.
Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering, K. Xu et al., small, 12 (23), 3106–3111 (2016); DOI: 10.1002/smll.201600521.
Space-Confined Chemical Vapor Deposition Synthesis of Ultrathin HfS2 Flakes for Optoelectronic Application, C. Yan et al., Adv. Funct. Mater., 27, 1702918 (2017); DOI: 10.1002/adfm.201702918.

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