Tungsten Diselenide (WSe2) Monolayer Film

CAS Number 12067-46-8

2D Materials, Low Dimensional Materials, Transition Metal Chalcogenides (TMCs), Transition Metal Dichalcogenides (TMDs)

Tungsten Diselenide (WSe2) Monolayer Film MSDS

Tungsten Diselenide (WSe2) Monolayer Film CAS 12067-46-8

High purity tungsten diselenide monolayer film

For applications in electronic and optoelectronic devices

Technical Data | MSDS | Literature and Reviews | Related Products

Pristine tungsten diselenide (WSe₂), CAS number 12067-46-8, is known to show ambipolar behaviour with a slightly hole conducting n-doped character. Doping treatments could increase the effective carrier mobilities up to four orders of magnitude above the threshold region with respect to the pristine WSe₂, reaching maximum values of 82 cm²V^-1s^-1 (p-doping) and 25 cm²V^-1s^-1 (n-doping) for holes and electrons, respectively.

Chemical vapor deposition (CVD) grown tungsten diselenide monolayers show PLQY approaching 60%, exceeding that of exfoliated crystals by over an order of magnitude. Monolayer of tungsten diselenide is of particular interest since it possesses a direct band gap and tuneable charge transport behaviours, which make it suitable for a variety of electronic and optoelectronic applications. Monolayer WSe₂ has a band gap smaller than monolayer MoS₂ (∼1.65 eV for monolayer WSe₂ versus 1.8 eV for monolayer MoS₂). Top-gated field-effect transistors based on WSe₂ monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm²/Vs, respectively.

High Purity

≥99.999% Crystal Purity

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Quick and reliable shipping

Low Cost

Low Cost Tungsten Diselenide

Applications

Applications in electronic and optoelectronic devices

Technical Data

CAS Number	12067-46-8
Chemical Formula	WSe₂
Molecular Weight	341.76 g/mol
Bandgap	1.65 eV
Synonyms	Tungsten selenide, Tungsten(IV) Selenide
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Materials science

Product Details

Substrate	Sapphire - Double Side Polished
Product Code	M2223F11
Size	1 cm × 1 cm*
Growth Method	CVD synthesis
Appearance	Transparent
Purity	>99%
Transparency	>97%
Coverage	>95%
Number of Layers	1
Sheet Resistance	N/A
Transfer Method	Directly grown

*Other sizes available: up to 2 cm × 2 cm or 2 inches in diameter.

High-quality tungsten diselenide (WSe₂) monolayer films are available on Sapphire as standard. Different substrates of monolayer WSe₂films, including SiO₂/Si, Glass, Silicon and Quartz are also available via custom order.

Discontinuous isolated triangular crystals (crystal islands) films are also available via custom request. Please contact us for more information regarding custom products.

MSDS Document

Tungsten Diselenide Monolayer Film MSDS Sheet

Literature and Reviews

Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications, J. Huang et al., ACS Nano, 8 (1), 923–930 (2014); DOI: 10.1021/nn405719x.
Observation of biexcitons in monolayer WSe2, Y. You et al., Nature Phys., 11, 477–481 (2015): DOI: 10.1038/nphys3324.
Electrical control of second-harmonic generation in a WSe2 monolayer transistor, K. Seyler et al., Nat. Nanotech 10, 407–411 (2015); DOI: 10.1038/nnano.2015.73.

Defect Activated Photoluminescence in WSe2 Monolayer, Z. Wu et al., J. Phys. Chem. C, 121 (22), 12294–12299 (2017); DOI: 10.1021/acs.jpcc.7b03585.
Evidence of indirect gap in monolayer WSe2, W. Hsu et al., Nat. Commun., 8, 929 (2017): DOI: 10.1038/s41467-017-01012-6.
Synthetic WSe2monolayers with highphotoluminescence quantum yield, H. Kim et al., Sci. Adv., 5, eaau4728 (2019); DOI: 10.1126/sciadv.aau47.
Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers, W. Zhang et al., ACS Nano, 8 (8), 8653–8661 (2014); DOI: 10.1021/nn503521c.
Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers, J. Kim et al., Science, 346 (6214), 1205-1208 (2014); DOI: 10.1126/science.125812.
Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics, H. Ji et al., Adv. Mater., 31 (42), 1903613 (2019); DOI: 10.1002/adma.201903613.
Efficient phonon cascades in WSe2 monolayers, I. Paradisanos et al., Nat. Commun., 12, 538 (2021); DOI: 10.1038/s41467-020-20244-7.

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