Indium(III) Selenide (In2Se3) Powder and Crystal

CAS Number 12056-07-4

2D Materials, Low Dimensional Materials, Post-Transition Metal Chalcogenides (PTMCs), Transition Metal Chalcogenides (TMCs)

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Indium(III) Selenide (In2Se3) Powder and Crystal CAS 12056-07-4

Low price, high purity 2D metal indium(III) selenide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology

Technical Data | MSDS | Literature and Reviews | Related Products

Indium(III) selenide (In₂Se₃), CAS number 12056-07-4, belongs to the A₂^IIIB₃^VI family, and it occurs as several different crystal structures and phases (α, β, γ, δ, and κ). Among those phases, α, β, γ-In₂Se₃are semiconducting in nature with layered structures held together via van der Waals. Strong intra-layer chemical valence bonding and weak inter-layer interactions give rise to highly anisotropic structural, electrical, optical, and mechanical properties. This also makes it possible to obtain 2D In₂Se₃nanosheets by scaling down to few- or mono-layer.

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High purity ≥99.999% Indium(III) Selenide(In2Se3) Crystal

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Low price Indium(III) Selenide (In2Se3)

Powder & Crystal

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Among them, α-In₂Se₃ and β-In₂Se₃ have been the most-studied phases. However, α-In₂Se₃ and β-In₂Se₃ phases share the same rhombohedral crystal structure. Normally, the β-In₂Se₃ phase only exists at elevated temperatures in bulk single crystals. However, at room temperature it persists in thin layers. This makes it possible for multi-level phase-change memory in a single material system

Few-to-monolayer In₂Se₃ nanosheets can be obtained through liquid exfoliation of high-purity indium(III) selenide powder - In₂Se₃. 2D nanosheets and nanoparticles are more compatible with conventional micro-fabrication techniques and they are solution-processable. This makes it easier to build complex structures for advanced electronic and optoelectronic devices

We supply low price indium(III) selenide in powder and crystal forms for a range of applications.

Indium(III) Selenide Powder

Can be used for preparation of indium(III) selenide nanoplates and ultrathin films

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≥99.995% purity

From £220

Indium(III) Selenide Crystals by Size

Can be used to produce single or few-layer indium(III) selenide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) or medium (≥25 mm²) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary

Bulk single indium(III) selenide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single indium(III) selenide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

Indium(III) selenide powder can also be used to prepare In₂Se₃ nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication), especially when it is the case of foreign elements such as lithium or sodium cations being inserted between layers by the process of intercalation. Liquid exfoliation can provide mass production of such products.

Technical Data

CAS Number	‎12056-07-4
Chemical Formula	In₂Se₃
Molecular Weight	466.52 g/mol
Bandgap	1.2 - 3.0 eV
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	Rhombohedral
Electronic Properties	2D semiconductor
Melting Point	890 °C
Colour	Black
Synonyms	Indium(III) Selenide, Diindium triselenide
Classification / Family	Transition metal dichalcogenides (TMDCs), 2D Semiconductor materials, Charge Density Wave (CDW), Hydrogen Revolution Reactions (HER), Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form	Purity
Powder	≥99.995%
Crystal	≥99.999%

Pricing Table

Product Code	Form	Size/Weight*	Price
M2136C1	Powder	500 mg	£220
M2136C1	Powder	1 g	£350
M2136A10	Crystal	Small (≥10 mm²)	£520 ea.
M2136A25	Crystal	Medium (≥25 mm²)	£850 ea.

*typical representative size, areas/dimensions may vary

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MSDS Documents

Indium(III) selenide powder

Indium(III) selenide crystal

Structure of Indium(III) Selenide

Indium selenide (In₂Se₃) belongs to the A₂^IIIB₃^VI family, and it occurs as several different crystal structures and phases (α, β, γ, δ, and κ). Among those phases, α, β, γ-In₂Se₃are semiconducting in nature with layered structures held together via van der Waals. Strong intra-layer chemical valence bonding and weak inter-layer interactions give rise to highly anisotropic structural, electrical, optical, and mechanical properties. This also makes it possible to obtain 2D In₂Se₃nanosheets by scaling down to few- or mono-layer.

α-In₂Se₃ and β-In₂Se₃ phases share the same rhombohedral crystal structure. The primitive unit cell contains three layers, each consisting of five covalently-bonded, monoatomic sheets in the sequence of Se–In–Se–In–Se. For α-In₂Se₃, the outer Se-atoms in each layer are aligned, whereas in β-In₂Se₃ they are located at the interstitial sites of the Se-atoms in the neighbouring layers.

indium(III) selenide - In2Se3 crystal structure — Top and side view of single-layer indium(III) selenide (In₂Se₃)

Properties of Indium(III) Selenide

After exfoliation of crystals or powder, indium(III) selenide typically has the following properties:

Rhombohedral structure (space group: R3m)
Highly anisotropic structural, electrical, optical, and mechanical properties.
α-In₂Se₃ and β-In₂Se₃ phases share the same rhombohedral crystal structure
α-In₂Se₃ is the stable form at room temperature and β-In₂Se₃ phase only exists at elevated temperatures in bulk single crystals

Applications of Indium(III) Selenide

Indium(III) selenide single crystals can be used to prepare monolayer and few-layer In₂Se₃ by mechanical or liquid exfoliation. Indium(III) selenide powder is suitable for liquid chemical exfoliation to prepare In₂Se₃ nanosheets and nanoparticles down to few-layer films.

Indium(III) selenide has been of great research interest and extensively studied to explore its applications in solar energy harvesting, non-volatile phase change memory and optoelectronic devices. In₂Se₃ is particularly desired for photodetection due to its optimum direct-band gap (1.3 eV), efficient absorption and great photon sensitivity. With a layered structure, exfoliated nanosheets from Indium(III) selenide (In₂Se₃) powder offer new opportunities for practical applications in photovoltaics, photodetectors, capacitors, phase change memory, ionic battery, and chemicals sensory devices.

Indium(III) selenide has been of great research interest and extensively studied to explore its applications in solar energy harvesting, nonvolatile phase change memory and optoelectronic devices. In₂Se₃ is particularly desired for photodetection due to its optimum direct-band gap (1.3 eV), efficient absorption and great photon sensitivity.

With a layered structure, exfoliated nanosheets from Indium(III) selenide (In₂Se₃) powder offer new opportunities for practical applications in photovoltaics, photodetectors, capacitors, phase change memory, ionic battery, and chemicals sensory devices.

Literature and Reviews

Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3, Adv. Opt. Mater., J. Quereda et al., 14 (12), 1939-1943 (2016); DOI: 10.1002/adom.201600365.
Crystalline–Crystalline Phase Transformation in Two-Dimensional In2Se3 Thin Layers, X. Tao et al., Nano Lett., 13 (8), 3501–3505 (2013); DOI: 10.1021/nl400888p.
Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition, J. Zhou et al., Nano Lett., 15 (10), 6400–6405 (2015); DOI: 10.1021/acs.nanolett.5b01590.

Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets, R. Jacobs-Gedrim et al., ACS Nano, 8 (11), 514–521 (2014); DIO: 10.1021/nn405037s.
Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials, W. Ding et al., Nat. Commun., 8:14956 (2017); DOI: 10.1038/ncomms14956.
Room temperature in-plane ferroelectricity in van der Waals In2Se3, C. Zheng et al., Sci. Adv., 4 (7) eaar7720 (2018); DOI: 10.1126/sciadv.aar7720
Indium selenide (In2Se3) thin film for phase-change memory, H. Lee et al., Mater. Sci& Eng., B 119, 196–201 (2005); doi: 10.1016/j.mseb.2005.02.060.
Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers, B. Krishnan et al., Appl. Surf. Sci., 191(1-4), 138-147 (2002); DOI: 10.1016/S0169-4332(02)00172-1.
Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes, D. Wu et al., Nano Lett., 15, 8136−8140 (2015); DOI: 10.1021/acs.nanolett.5b03575.
Phototransistor based on single In2Se3 nanosheets, Q. Li et al., Nanoscale, 6, 14538 (2014); DOI: 10.1039/c4nr04404e.
High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets, W. Feng et al., Nanotechnology 29, 445205 (2018); doi: 10.1088/1361-6528/aadc73.

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