Hexagonal Boron Nitride (h-BN) Crystals and Films

CAS Number 10043-11-5

2D Materials, Hexagonal Boron Nitride, Low Dimensional Materials

MSDS

Hexagonal Boron Nitride (h-BN) Crystals and Films CAS 10043-11-5

Product Code M2133A1-5

Price £620 ex. VAT (click to shop in )

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Low price, high purity 2D hexagonal boron nitride (h-BN) crystals and films

Suitable for the creation of single or few-layer sheets via mechanical or liquid exfoliation

Technical Data | MSDS | Structure | Literature and Reviews

With a honeycomb structure based on sp² covalent bonds similar to graphene, hexagonal boron nitride (CAS number 10043-11-5) is also known as “white graphene”. h-BN monolayers have a layered structure (again, very similar to graphene).

The hexagonal crystal structure of h-BN is one of the three crystalline forms of boron nitride (BN). BN crystallises in hexagonal form at room temperature and normal pressure. It is the most stable phase of the three crystalline forms. At higher temperature and pressure, h-BN transform into a wurtzite structure (P63mc).

High Purity

High purity ≥99.99% Hexagonal Boron Nitride Cystal

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Low price Hexagonal Boron Nitride (h-BN)

Film & Crystals

Available in Film and crystal forms

h-BN is normally considered an insulator, and is used as a sub-layer material for any other 2D material in electronic devices. However, it has exotic opto-electronic properties (e.g. wide bandgap and low dielectric constant) along with mechanical robustness, high thermal conductivity and chemical inertness. It was later confirmed to have an indirect bandgap (at 5.955 eV), and thus is also considered a semiconductor.

2D h-BN has no absorption in the visible range, but has absorption in the ultraviolet region with good photoluminescence.

Hexagonal boron nitride (h-BN) monolayer film has a similar lattice structure to graphene, with a lattice mismatch of only about 1.8%. h-BN and graphene are different in terms of their electrical conductivity. With a bandgap of 6.08 eV, h-BN has an insulating nature, whereas graphene is considered a semi-metal.

h-BN is widely used as a dielectric substrate in electronic and optical devices for graphene and other 2D-layered semiconductors (e.g. transition metal dichalcogenides TMDs).

Hexagonal boron nitride (h-BN) few-layer film, often referred to as h-BN nanosheets (h-BNNS), has an ultra-flat surface without dangling bonds. Due to its oxidation resistance even at high temperatures (up to 1000 ^oC) and chemical resistance to both acids and bases, it is believed to be a better substrate than silicon.

We supply low price hexagonal boron nitride (h-BN) in several different forms for a range of applications.

Hexagonal Boron Nitride Crystals

Can be used for preparation of hexagonal boron nitride nanoplates and ultrathin films

Available in Pack of 5 or 10 crystals

≥99.99% purity

From £520

Hexagonal Boron Nitride by Size

Can be used as substrate, dielectrics and passivation laayers or interlayer to other 2D materials

Monolayer and few-layer h-BN films available on SiO₂/Si or PET substrate*

≥99.99% purity

From £250

*Custom made size and substrates are also available

Glass (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Sapphire (1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Silicon (1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Quartz (1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
Copper (5 cm × 10 cm or custom-made sizes)

Hexagonal boron nitride (h-BN) crystals are most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.

h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.

Technical Data

CAS Number	‎10043-11-5
Full Name	Hexagonal boron nitride
Chemical Formula	BN
Molecular Weight	24.82 g/mol
Bandgap	Indirect bandgap at 5.955 eV
Preparation	Synthetic - Chemical Vapour Transport (CVT)
Structure	Hexagonal (2H)
Electronic Properties	2D Materials - insulator/semiconductor
Melting Point	‎‎2,973 °C (sublimates)
Colour	Colourless
Synonyms	White graphene, hexagonal BN, h-BN
Classification / Family	2D materials, Organic electronics, Materials science

Product Details

Form	Purity
Crystal	≥99.99%
Film	≥99%

Monolayer Film

Substrate	SiO₂/Si	PET	Sapphire	Quartz
Product Code	M2161F11	M2162F11	M2319F11	M2320F11
Size	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent	Transparent	Transparent
Purity	>99%	>99%	>99%	>99%
Transparency	>97%	>97%	>97%	>97%
Coverage	>95%	>95%	>95%	>95%
Number of Layers	1	1	1	1
Sheet Resistance	n.a.	n.a.	n.a.	n.a.
Transfer method	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer
Substrate Thickness	300 m (oxide layer)	250 µm	300 µm	1 mm

Few-Layer Film

Substrate	SiO₂/Si	PET	Sapphire	Quartz
Product Code	M2163F11	M2164F11	M2321F11	M2322F11
Size	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent	Transparent	Transparent
Purity	>99%	>99%	>99%	>99%
Transparency	>97%	>97%	>97%	>97%
Coverage	>95%	>95%	>95%	>95%
Number of Layers	2 - 6	2 - 6	2 - 6	2 - 6
Sheet Resistance	n.a.	n.a.	n.a.	n.a.
Transfer method	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer	Wet chemical transfer
Substrate Thickness	300 nm (oxide layer)	250 µm	300 µm	1 mm

Pricing Table

Product Code	Form	Package/Substrates*	Price
M2133A1	Crystals	Pack of 5 Crystals	£520
M2133C1	Crystals	Pack of 10 Crystals	£900
M2161F11	Monolayer Films	SiO₂/Si - 1 Each	£200
M2161F11	Monolayer Films	SiO₂/Si - 2 Each	£340
M2162F11	Monolayer Films	PET - 1 Each	£200
M2162F11	Monolayer Films	PET - 2 Each	£340
M2319F11	Monolayer Films	Sapphire - 1 Each	£200
M2319F11	Monolayer Films	Sapphire - 2 Each	£340
M2320F11	Monolayer Films	Quartz - 1 Each	£200
M2320F11	Monolayer Films	Quartz - 2 Each	£340
M2163F11	Few-Layer Films	SiO₂/Si - 1 Each	£200
M2163F11	Few-Layer Films	SiO₂/Si - 2 Each	£340
M2164F11	Few-Layer Films	PET - 1 Each	£200
M2164F11	Few-Layer Films	PET - 2 Each	£340
M2321F11	Few-Layer Films	Sapphire - 1 Each	£200
M2321F11	Few-Layer Films	Sapphire - 2 Each	£340
M2322F11	Few-Layer Films	Quartz - 1 Each	£200
M2322F11	Few-Layer Films	Quartz - 2 Each	£340

*typical representative size, areas/dimensions may vary

**item with a lead time of 4 - 6 weeks, please contact for more information

Shipping is free for qualifying orders.

MSDS Documents

Monolayer Film

Hexagonal boron nitride monolayer film SiO2/Si

Hexagonal boron nitride monolayer film PET

Hexagonal boron nitride monolayer film sapphire

Hexagonal boron nitride monolayer film quartz

Few-Layer Film

Hexagonal boron nitride few-layer film SiO2/Si

Hexagonal boron nitride few-layer film PET

Hexagonal boron nitride few-layer film sapphire

Hexagonal boron nitride few-layer film quartz

Structure of Hexagonal Boron Nitride

With a honeycomb structure based on sp² covalent bonds similar to graphene, hexagonal boron nitride is also known as “white graphene”. h-BN monolayers have a layered structure (again, very similar to graphene).

h-BN crystal structure - hexagonal boron nitride — The crystal structure of single-layer hexagonal boron nitride (h-BN)

Properties of Hexagonal Boron Nitride

After exfoliation of Hexagonal Boron Nitride crystal or powder, Hexagonal Boron Nitride typically has the following properties:

‎Known as “white graphene”
BN crystallises in hexagonal form (P63mc)
Normally considered an insulator
With an indirect bandgap (at 5.955 eV), and thus is also considered a semiconductor

Synthesis and Usage

High quality monolayer and few-layer h-BN films were first grown directly on copper foil via the chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates via the wet chemical transfer process.

h-BN films are ready to use in various research purposes, such as microscopic analysis, photoluminescence, and Raman spectroscopy studies. h-BN monolayer film can also be transferred to other substrates.

Applications of Hexagonal Boron Nitride

Thanks to its direct wide bandgap and ultraviolet luminescence property, exfoliated h-BN nano-sheets are a promising candidate for applications in ultraviolet lasers, photon emission, and DUV detectors. 2D h-BN also finds applications in FETs, quantum tunnelling transistors, thermoelectric devices, LEDs and solar cells.

Few-layer h-BN can be achieved either by physical, thermal, or liquid phase exfoliation, Like graphite, its layer-by-layer structure is held together by van der Waals forces.

The optical band gap of monolayer h-BN is found to be 6.07 eV, while few-layer h-BN has bandgaps ranging from 5.56 to 5.92 eV, depending on the number of layers. Thanks to its direct wide bandgap and ultraviolet luminescence property, exfoliated h-BN nano-sheets are a promising candidate for applications in ultraviolet lasers, photon emission, and DUV detectors. 2D h-BN also finds applications in FETs, quantum tunnelling transistors, thermoelectric devices, LEDs and solar cells.

Due to its special chemical properties and electronic structure, h-BN often serves as an atomic flat insulating substrate or a tunneling dielectric barrier in graphene and other 2D electronics. Like graphene, h-BN exhibits excellent mechanical flexibility, chemical and temperature stability, and high thermal conductivity. h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.

Literature and Reviews

Hexagonal boron nitride is an indirect bandgap semiconductor, G. Cassabois et al., Nat. Photon., 10, 262–266 (2016);DOI: 10.1038/NPHOTON.2015.277.
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications, J. Wang et al., RSC Adv., 7, 16801 (2017); DOI: 10.1039/c7ra00260b.
Two dimensional hexagonal boron nitride (2D-h-BN): synthesis, properties and applications, K. Zhang et al., J. Mater. Chem. C, 5, 11992 (2017); DOI: 10.1039/c7tc04300g.

Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing, J. Bao et al., Electron. Mater. Lett., 12, 1-16 (2016), DOI: 10.1007/s13391-015-5308-2.
Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications, Q. Weng et al., Chem. Soc. Rev., 45, 3989-4012 (2016); DOI:10.1039/C5CS00869G.
Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al., Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606 .
Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets, G. Bhimanapati et al., anoscale, 6, 11671-11675 (2014); DIO: 10.1039/C4NR01816H.
Large Scale Thermal Exfoliation and Functionalization of Boron Nitride, Z. Cui et al., small, 10 (12), 2352–2355 (2014); DOI: 10.1002/smll.201303236.
White Graphene undergoes Peroxidase Degradation, R. Kurapati et al., Angew.Chem., 128,5596 –5601 (2016); DOI:10.1002/anie.201601238.
Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets, J. Wang et al., Nanoscale, 7, 1718-1724 (2015); DOI: 10.1039/C4NR04445B.
Monolayer to Bulk Properties of Hexagonal Boron Nitride, D. Wickramaratne et al., J. Phys. Chem. C, 122 (44), 25524–25529 (2018); DOI: 10.1021/acs.jpcc.8b09087.
Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al, Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606.
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride, K. Ba et al., Sci. Rep., 7, 45584 (2017); DOI: 10.1038/srep45584.
Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains, Q. Wu et al., Sci. Rep., 5, 16159 (2015); DOI: 10.1038/srep16159,
Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition, R. Chang et al., Chem. Mater. 2017, 29, 6252−6260 (2017); DOI: 10.1021/acs.chemmater.7b01285.
Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films, P Sutter et al., Nano Lett. 2013, 13, 276−281 (2013); DIO: 10.1021/nl304080y.
High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride, H, Liu et al., Nanoscale, 10, 5559–5565 (2018); DOI: 10.1039/c7nr09438h .
Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal−Organic Chemical Vapor Deposition, D. Kim et al., Cryst. Growth Des., 17, 2569−2575 (2017); DOI: 10.1021/acs.cgd.7b00107.
Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets, J. Nanomater., 30429 (2015); doi: 10.1155/2015/304295.
Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition, J. Liu et al., Molecules, 21, 1636 (2016); doi:10.3390/molecules21121636.
Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy, APL Mater. 2, 092502 (2014); doi.org/10.1063/1.4889815.
Vacuum-Ultraviolet Photodetection in Few-Layered h‑BN, W. Zheng et al., ACS Appl. Mater. Interfaces, 10, 27116−27123 (2018); DOI: 10.1021/acsami.8b07189.