Gate Deposition Mask - ITO OFETs
An evaporation mask for deposition of gate contacts onto Ossila's pre-patterned ITO substrates (S161). The T-shaped aperture allows the gate to cover the interdigitated source-drain contacts while also providing easy electrical connection via the Ossila USB test board.
Mask with direct contact: For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 100 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 100 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
| Size | 75 mm x 75 mm |
|---|---|
| Thickness | 1.7mm without spacer, 1.8mm with spacer (exc. bolts) |
| Material | Stainless steel |
| Capacity | 12 substrates (S161 or S162) |
| Spacer | Optional 100 μm substrate separation spacer on one side |
Lid
Substrate holder and 100 μm standoff
Gate shadow mask