PBTTT Data Sheet


Poly(2,5-bis(3-tetradecyllthiophen-2-yl)thieno[3,2-b]thiophene). Commonly known as PBTTT.

PBTTT


Solubility of PBTTT

The recommend solvent is 1,2-Dichlorobenzene (10 mg/mL @ 80°C). You can use alternative solvents such as Tetralin, Decalin or Indan but it should be noted that these solvents will require heating to 80°C. Gelation can occur on cooloing the solution. This is a reversible process and the solution can be restored on heating.

Absorption(max, thin film): 550nm
DSC (2nd Heat Cycle/Peak): T1 110°C T2 220°C


Electrical properties of PBTTT


Field effect mobility (Max): 1.0 x 10¯¹ cm²/V.s
On/Off Ratio (Max): 10^7
Vo: ~20V (with SiO2 dielectric)
Ionisation energy: - 5.1 eV

This data represents typical values obtained from Mercks own device configuration. The ionisation energy was measured using a Riken-AC2 spectrophotometer.


Storage and stability of PBTTT

Solid Polymer

Storage: Store in the dark under an inert atmosphere
Temperature: Can be heated to 180°C without degradation

Processed Film Stability of PBTTT

Storage: Store in the dark under an inert atmosphere
Thermal stability: Stable up to 190°C under an inert atmosphere
Atmospheric stability: For the best results measurements and processing should be carried out under an inert atmosphere.



Deposition from a warm solution gives highly uniform films of PBTTT.


Processing example Bottom Gate Field Effect Transistor with PBTTT


Structure: Bottom Gate
Material
Process
Substrate
n-doped silicon/silicon dioxide (230mn) as gate dielectric with Au electrodes (using ITO adhesion layer)
 Substrate cleaning:
  • Sonicated in water
  • Sonicated in acetone
  • Sonicated in IPA
  • Ozone treated
Surface treatment layer
OTS
  • Treatment is necessary to enhance transistor properties
  • OTS - 10mM in tulene with ~150 ppm water
  • Immerse substrate in the OTS solution for 20 min at 60°C
OSC
PBTTT
  • 10 mg/mL solution in 1,2-dichlorobenzene used
  • Spin at 3000 rpm, with 1 s acceleration, for 3 min
  • Anneal at 100°C for 10 min
  • Processing under inert atmosphere is advised

Typical Values: µ=1.0 x 10^-1 cm²/V.s; On/Off=10^7



Processing example Top Gate Field Effect Transistor with PBTTT


Structure: Top Gate
Material
Process
Substrate
PEN
 Substrate cleaning:
  • Sonicated in methanol 1 min then dried
Source/Drain
Au
  • Deposit to ~30nm thickness
Contacts SAM
M001
  • Cover substrate for 1 min before spinning
  • Spin at 500 rpm for 18 sec
  • Rinse with IPA
OSC
PBTTT
  • 5 mg/mL solution in 1,2-dichlorobenzene
  • Spin at 3000rpm for 2 min
  • Anneal at 100°C for 1 min with cover
  • Processing in yellow light is advised
Dielectric
D139-FC43-045
  • Spin at 500rpm for 10 s with 3 s acceleration
  • Final spin speed at 1000rp for 20 s with 3 s acceleration
  • Baked in oven at 100°C for 20 min
  • Approx. thickness of 500nm
Gate
Au
  • Deposit to ~30nm thickness


Typical Values: µ=4.0 x 10^-2 cm²/V.s; On/Off=10^4




Download PBTTT data sheet here
Download the MSDS here
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