Titanium Disulfide Powder


1 g

Order Code: M2147C1
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Product Code Quantity Price
M2147C1 1 g £268.00

General Information

CAS number ‎12039-13-3
Chemical formula TiS2
Molecular weight 111.99 g/mol
Bandgap n/a
Synonyms Titanium sulfide (TiS2), Bis(sulfanylidene)titanium
Classification / Family Transition metal dichalcogenides (TMDCs), Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Powder
Preparation Synthetic - chemical vapour transport (CVT)
Purity ≥ 99.995%
Structure ‎Octahedral (1T)
Electronic properties Semimetal, Diamagnetic
Melting point n/a
Appearance Yellow powder

General Description

Titanium disulfide (TiS2) is highly stable. It is the most lightweight and low-cost Group IV TMDC material. TiS2 is known to be a semimetal in when in bulk form, and a semiconductor when strain or pressure is applied in the monolayer form. With a higher degree of overlap of the valence and conduction bands, its semi-metallic nature intensifies when compression is applied. However, the energetic overlap is lifted and a semimetal-to-semiconductor transition occurs under pressure or strains.

Applications

Two-dimensional thin layer nanosheets made from chemically-exfoliated titanium disulfide powder are generally used as electrode materials in storage batteries. Atomic-layered TiSquantum dot materials prepared from liquid exfoliation of  TiS2 powder can also be used as electrocatalysts for hydrogen evolution reactions (HER).

Synthesis

Titanium disulfide powder is obtained via the CVT method, with a purity in excess of 99.995% achieved.

Usage

Titanium disulfide powder is suitable for liquid chemical exfoliation to prepare TiS2 nanosheets and nanoparticles down to few-layer films. TiS2 powder is also used for preparation of mono-layer and few-layer films via chemical vapour deposition (CVD).

Literature and Reviews

    1. TiS2 Monolayer as an Emerging Ultrathin Bifunctional Catalyst: Influence of Defects and Functionalization, T. Das et al., ChemPhysChem, 20, 608–61 (2019); DOI: 10.1002/cphc.2018010.
    2. Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap, transition in monolayer 1T-TiS2, C. Xu et al., RSC Adv., 2015, 5, 83876 (2015); DOI: 10.1039/c5ra16877e.
    3. Strain-induced enhancement of thermoelectric performance of TiS2 monolayer based on first-principles phonon and electron band structures, G. Li et al., Nanotechnology 29, 015204 (2018); doi: 10.1088/1361-6528/aa99ba.
    4. High Performance Pseudocapacitor Based on 2D Layered Metal Chalcogenide Nanocrystals, G. Muller et al., Nano Lett., 15, 1911−1917 (2015); DOI: 10.1021/nl504764m.
    5. 2D TiS2 Layers: A Superior Nonlinear Optical Limiting Material, S. Varma et al., Adv. Optical Mater., 5, 1700713 (2017); DOI: 10.1002/adom.201700713.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.