The OFET gate shadow mask is designed for thermal evaporation of gates either above or below the source-drain contacts on Ossila's standard OFET substrates (20 mm x 15 mm). The substrates are kept away from direct contact with the mask by use of a 200 μm spacer which prevents damage to delicate polymer layers and allows evaporation of any residual solvents while in vacuum chambers.
The mask can be used in conjunction with the source drain evaporation stack and linear/interdigitated shadow masks to produce all four types of OFET:
- top-gate/bottom contact
- top-gate/top contact
- bottom-gate/bottom contact
- bottom-gate/top contact
Mask with direct contact: For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 200 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 200 μm spacer to help avoid scratches and allow better out-gassing.
||75 mm x 75 mm
|Source drain evaporation stack
|Source drain masks
Substrate holder and 200 μm standoff
Gate shadow mask
To the best of our knowledge, the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.