Gate Deposition Mask for Long Channel OFETs

Order Code: E263
Price excludes taxes
Not in stock (price excludes taxes)

The OFET gate shadow mask is designed for thermal evaporation of gates either above or below the source-drain contacts on Ossila's standard OFET substrates (20 mm x 15 mm). The substrates are kept away from direct contact with the mask by use of a 200 μm spacer which prevents damage to delicate polymer layers and allows evaporation of any residual solvents while in vacuum chambers.


Update: As part of our product improvement program, we have decided to simplify the masks available. Each type of mask is now available as a two sided mask. On one side a spacer and substrate holder are welded to the mask and on the other just a substrate holder. This will make both options available for our customers to test out if they are uncertain which is best suited for their work. It also means you only need to purchase a single mask (rather than two) if you would like to use both systems.

Please note that the single sided masks are only available while stocks last. However, if you are concerned that the double sided masks will be too thick for your evaporator, please do get in touch as we will be happy to help with this.



The mask can be used in conjunction with the source drain evaporation stack and linear/interdigitated shadow masks to produce all four types of OFET:
  • top-gate/bottom contact
  • top-gate/top contact
  • bottom-gate/bottom contact
  • bottom-gate/top contact


Top gate OTFT shadow mask (technical drawing)
OFET gate shadow mask (technical drawing)



Size 75 mm x 75 mm
Thickness 1.4 mm
Material Stainless steel
Capacity 12 substrates


Compatible components

Source drain evaporation stack E191
Source drain masks 1.4 mm
Material E201, E211
Substrates S111, S141


Top gate OTFT shadow mask (dimensions)Top gate on long channel linear OTFT (technical drawing)
Dimensions (left) and schematic (right) of the substrate system including source-drain contacts.


Top gate evaporation stack for long channel OTFT (exploded view)







Substrate holder and 200 μm standoff



 Gate shadow mask





close up schematic of the assembled top gate shadow mask close up schematic of the assembled top gate shadow mask(schematic)
Close up of the assembled mask (without lid) showing the standoff. Schematic (left) Photo (right)


To the best of our knowledge, the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.