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Nitrogen-doped Graphene Oxide Powders

CAS Number 7782-42-5

2D Materials, Anode Materials, Graphene, Low Dimensional Materials, Materials

Product Code M891-200mg
Price £190 ex. VAT

High Quality 2D Semiconductor Material

An n-type semiconductor used in a wider variety of electronic device structures

Overview | Product Information | Related Products

Nitrogen-doped graphene oxide is easily dispersed within solution, which allows it to be processed in high concentrations. Unlike standard graphene oxide, the doping with nitrogen transforms the material from a p-type material to an n-type material. By transforming the material into an n-type semiconductor, graphene oxide can be used in a wider variety of electronic device structures. In addition, nitrogen-doped graphene oxide can be used as a precursor for the formation of nitrogen-doped graphene.

High purity nitrogen-doped graphene oxide powders

High Purity

>99% purity

Worldwide shipping for 7782-42-5

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Quick and reliable shipping

Low cost 7782-42-5

Low Cost

Afforable nitrogen-doped graphene oxide

N-type semiconductor

Great Semiconductor

N-type semiconductor

General Information

CAS Number 7782-42-5 (graphite)
Chemical Formula CxHyNwOz
Carbon:Nitrogen 14.5
Molecular Weight N/A
Synonyms N-doped graphene oxide
Classification or Family 2D materials, n-type semiconductor, Carbon nanomaterials, Graphene oxide, Graphene, Organic electronics
Purity >99%, single layer
Colour Black/Brown

Nitrogen-doped Graphene Oxide Powders

Product Code M891
Flake Size 1 – 5 μm
Flake Thickness 0.8 – 1.2 nm
Purity >99%
Packaging Information Light resistant bottle
chemical structure of n-doped graphene oxide
Chemical structure of nitrogen-doped monolayer graphene oxide

MSDS Documents

Nitrogen-Doped Graphene Oxide Powder MSDSNitrogen-doped graphene oxide powder

Pricing Table

Product Code Form Flake Size Weight/Volume Pricing
M891 Powder 1 - 5 μm 200 mg £190
M891 Powder 1 - 5 μm 500 mg £400

More on Nirogen-doped Graphene Oxide

N-doped graphene oxide (NGO), CAS number 7782-42-5, overcomes the disadvantages of graphene oxide (GO) by adding nitrogen doping into the process of GO synthesis to repair defects and improve the electronic structure of GO.


  1. High-Performance Perovskite Solar Cells Engineered by an Ammonia Modified Graphene Oxide Interfacial Layer, S Feng et al., ACS Appl. Mater. Interfaces, Article ASAP (2016), DOI: 10.1021/acsami.6b02064.
  2. The Two-Dimensional Nanocomposite of Molybdenum Disulfide and Nitrogen-Doped Graphene Oxide for Efficient Counter Electrode of Dye-Sensitized Solar Cells, C-K. Cheng et al., Nanoscale Res. Lett., 11:117 (2016); DOI 10.1186/s11671-016-1277-0.
  3. Nitrogen-doped reduced graphene oxide electrodes for electrochemical supercapacitors, H. Nolan et al., Phys.Chem.Chem.Phys., 16, 2280 (2014); DOI: 10.1039/c3cp54877e.

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