Order Code: M841MSDS sheet
|Molecular weight||247.97 g/mol|
|HOMO/LUMO/Bandgap||HOMO = 5.82 eV; LUMO = 3.84 eV (Eg = 1.98 eV)|
|Synonyms||Tungsten(4+) disulfide, tungsten sulfide|
|Classification / Family||2D semiconducting materials, monolayer materials, thin-layered transition-metal dichalcogenides (TMDs), n-type semiconductors|
|Single layer ratio||95%|
|Melting point||N/a (decomposes to tungsten and sulfur)|
Monolayer tungsten disulfide (WS2), a family member of the atomically thin-layered transition-metal dichalcogenides (TMDs) has attracted great attention for its intriguing electrical and optical properties. It finds various applications in organic electronics such as solar cells, light-emitting diodes and photosensors.
Monolayer WS2 has a direct bandgap of ~2.0 eV while the bulk WS2 is generally an n-type indirect semiconductor with a bandgap of ~1.4 eV. Comparing with bulk WS2 indirect semiconductor, monolayer WS2 possesses high on/off ratio, controllable spin and valley polarisation, strong geometrical confinement of excitons and tunable photoluminescence.
Literature and Reviews
- Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2, W. Yang et al., Nano Lett., 16 (3), 1560–1567 (2016); DOI: 10.1021/acs.nanolett.5b04066
- Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates, Z. Xu et al., ACS Nano, 9(6), 6178-6187 (2015); DOI: 10.1021/acsnano.5b01480.
- Light Generation and Harvesting in a van der Waals Heterostructure, O. Lopez-Sanchez et al., ACS Nano, 8 (3), 3042–3048 (2014); DOI: 10.1021/nn500480u.
- Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2, N. Peimyoo et al., ACS Nano, 8 (11), 11320–11329 (2014); DOI: 10.1021/nn504196n