Molybdenum Ditelluride Powder
|Molecular weight||351.14 g/mol|
|Bandgap||1.0 - 1.13 eV |
|Classification / Family||Transition metal dichalcogenides (TMDCs), 2D semiconductor Materials, NIR band-gap, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials science|
|Preparation||Synthetic - Chemical Vapour Transport (CVT)|
|Structure||Hexagonal, 2H phase|
|Electronic properties||2D semiconductor|
With a relatively small band gap (1.1 eV) compared to other group VI TMDCs, single or few-layer MoTe2 is a promising candidate in a range of applications, including ambipolar transistors. Due to its low band-gap, it is also of interest in optoelectronic technologies that span the visible to near-infrared range.
Single or few-layer MoTe2 nanosheets can be created via liquid exfoliation under ambient conditions. Exfoliated nanosheets can be be fabricated into layered films and deposited onto a range of different substrates. MoTe2 nanosheets can be used in high-performance sodium-ion batteries, as a electrocatalyst in hydrogen evolution reactions (HER), and in photovoltaic solar cells.
MoTe2 nanosheets prepared by chemical exfoliation have a band-gap at near-infrared (NIR) wavelengths. Thus, they are of direct interest in photo-detector devices.
Prepared by CVT, MoTe2 powder with purities in excess of 99.995% has been achieved.
Molybdenum ditelluride powder can be used with liquid chemical exfoliation to prepare MoTe2 nanosheets and nanoparticles down to few-layer films. MoTe2 powder has a purity in excess of 99.995%, and can be used with CVD deposition to create high quality mono-layer and few-layer films. These are of direct interest in electronic and photoluminescence studies.
Literature and Reviews
- Exfoliated multilayer MoTe2 field-effect transistors, S. Fathipour et al., Appl. Phys. Lett. 105, 192101 (2014); doi: 10.1063/1.4901527.
- Temperature dependent Raman spectroscopic study of mono-, bi-, and tri-layer molybdenum ditelluride, J. Park et al., Appl. Phys. Lett. 107, 153106 (2015); doi: 10.1063/1.4934181.
- Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain, S. Song et al, Nano Lett., 16, 188-193 (2016); DOI: 10.1021/acs.nanolett.5b03481.
- Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2, L. Zhou et al., J. Am. Chem. Soc., 137, 11892-11895 (2015); DOI: 10.1021/jacs.5b07452.
Nonlinear Saturable Absorption of Liquid-Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets, D. Mao et al., Small, 12 (11), 1489–1497 (2016);