||1.2 - 3.0 eV 
||Indium (III) Selenide, Diindium triselenide
|Classification / Family
Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science
||Synthetic - chemical vapour transport (CVT)
Indium selenide (In2Se3) belongs to the A2IIIB3VI family, and it occurs as several different crystal structures and phases (α, β, γ, δ, and κ). Among those phases, α, β, γ-In2Se3 are semiconducting in nature with layered structures held together via van der Waals. Strong intra-layer chemical valence bonding and weak inter-layer interactions give rise to highly anisotropic structural, electrical, optical, and mechanical properties. This also makes it possible to obtain 2D In2Se3 nanosheets by scaling down to few- or mono-layer.
2D nanosheets and nanoparticles are more compatible with conventional micro-fabrication techniques and they are solution-processable. This makes it easier to build complex structures for advanced electronic and optoelectronic devices
Few-to-monolayer In2Se3 nanosheets can be obtained through liquid exfoliation of high-purity indium selenide powder - In2Se3.
With a layered structure, exfoliated nanosheets from Indium (III) selenide (In2Se3) powder offer new opportunities for practical applications in photovoltaics, photodetectors, capacitors, phase change memory, ionic battery, and chemicals sensory devices.
Indium (III) selenide (In2Se3) powder is obtained via the CVT method, with a purity in excess of 99.995% achieved.
Indium (III) selenide powder is suitable for liquid chemical exfoliation to prepare In2Se3 nanosheets and nanoparticles down to few-layer films. In2Se3 powder is also used for the preparation of mono-layer and few-layer films via chemical vapour deposition (CVD).
Literature and Reviews
Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3, Adv. Opt. Mater., J. Quereda et al., 14 (12), 1939-1943 (2016); DOI: 10.1002/adom.201600365.
Indium selenide (In2Se3) thin film for phase-change memory, H. Lee et al., Mater. Sci& Eng., B 119, 196–201 (2005); doi: 10.1016/j.mseb.2005.02.060.
Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers, B. Krishnan et al., Appl. Surf. Sci., 191(1-4), 138-147 (2002); DOI: 10.1016/S0169-4332(02)00172-1.
Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes, D. Wu et al., Nano Lett., 15, 8136−8140 (2015); DOI: 10.1021/acs.nanolett.5b03575.
Phototransistor based on single In2Se3 nanosheets, Q. Li et al., Nanoscale, 6, 14538 (2014); DOI: 10.1039/c4nr04404e.
High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets, W. Feng et al., Nanotechnology 29, 445205 (2018); doi: 10.1088/1361-6528/aadc73.
Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets, R. Jacobs-Gedrim et al., ACS Nano, 8 (11), 514–521 (2014); DIO: 10.1021/nn405037s.