Indium (III) Selenide Powder - In2Se3


Order Code: M2136C1
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Product Code Quantity Price
M2136C1 500 mg £168.00
M2136C1 1 g £269.00

General Information

CAS number 12056-07-4
Chemical formula In2Se3
Molecular weight 466.52 g/mol
Bandgap 1.2 - 3.0 eV [1]
Synonyms Indium (III) Selenide, Diindium triselenide
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Powder
Preparation Synthetic - chemical vapour transport (CVT)
Purity ≥ 99.995%
Structure Hexagonal (2H)
Electronic properties 2D semiconductor
Melting point 890 °C
Appearance Black powder

General Description 

Indium selenide (In2Se3) belongs to the A2IIIB3VI family, and it occurs as several different crystal structures and phases (α, β, γ, δ, and κ).  Among those phases, α, β, γ-In2Seare semiconducting in nature with layered structures held together via van der Waals. Strong intra-layer chemical valence bonding and weak inter-layer interactions give rise to highly anisotropic structural, electrical, optical, and mechanical properties. This also makes it possible to obtain 2D In2Senanosheets  by scaling down to few- or mono-layer.

2D nanosheets and nanoparticles are more compatible with conventional micro-fabrication techniques and they are solution-processable. This makes it easier to build complex structures for advanced electronic and optoelectronic devices

Few-to-monolayer In2Se3 nanosheets can be obtained through liquid exfoliation of high-purity indium selenide powder - In2Se3.

 

Indium (III) Selenide Powder - In2Se3

Indium (III) Selenide Powder (In2Se3) structure.

Application

With a layered structure, exfoliated nanosheets from Indium (III) selenide (In2Se3) powder offer new opportunities for practical applications in photovoltaics, photodetectors, capacitors, phase change memory, ionic battery, and chemicals sensory devices.

Synthesis

Indium (III) selenide (In2Se3powder is obtained via the CVT method, with a purity in excess of 99.995% achieved.

Usage

Indium (III) selenide powder is suitable for liquid chemical exfoliation to prepare  In2Se3 nanosheets and nanoparticles down to few-layer films. In2Se3 powder is also used for the preparation of mono-layer and few-layer films via chemical vapour deposition (CVD).


Literature and Reviews

    1. Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3, Adv. Opt. Mater., J. Quereda et al., 14 (12), 1939-1943 (2016); DOI: 10.1002/adom.201600365.
    2. Indium selenide (In2Se3) thin film for phase-change memory, H. Lee et al., Mater. Sci& Eng., B 119, 196–201 (2005); doi: 10.1016/j.mseb.2005.02.060.
    3. Structural, optical and electrical properties of In2Se3 thin films formed by annealing chemically deposited Se and vacuum evaporated In stack layers, B. Krishnan et al., Appl. Surf. Sci., 191(1-4), 138-147 (2002); DOI: 10.1016/S0169-4332(02)00172-1.
    4. Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes, D. Wu et al., Nano Lett., 15, 8136−8140 (2015); DOI: 10.1021/acs.nanolett.5b03575.
    5. Phototransistor based on single In2Se3 nanosheets, Q. Li et al., Nanoscale, 6, 14538 (2014); DOI: 10.1039/c4nr04404e.
    6. High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets, W. Feng et al., Nanotechnology 29, 445205 (2018); doi: 10.1088/1361-6528/aadc73.
    7. Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets, R. Jacobs-Gedrim et al., ACS Nano, 8 (11), 514–521 (2014); DIO: 10.1021/nn405037s.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.