Hexagonal Boron Nitride Few-Layer Film


Order Code: M2164F11
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Substrate Product code Size Quantity (EA) Price
SiO2/Si M2163F11 1 cm × 1 cm 2 £189.00
SiO2/Si M2163F11 1 cm × 1 cm 4 £323.00
PET M2164F11 1 cm × 1 cm 2 £189.00
PET M2164F11 1 cm × 1 cm 4 £323.00

General Information

CAS number 10043-11-5
Chemical formula BN
Molecular weight 24.82 g/mol
Bandgap 6.08 eV
Synonyms White graphene, hexagonal BN, h-BN
Classification / Family 2D semiconducting materials, 2D insulators, Nanomaterials, OLEDs, Organic photovoltaics (OPV), Organic electronics
Form Film

Product Details

Substrate SiO2/Si PET
Product code M2163F11 M2164F11
Size 1 cm × 1 cm* 1 cm × 1 cm*
Growth Method CVD synthesis CVD synthesis
Appearance Transparent Transparent
Purity > 99% > 99%
Transparency > 97% > 97%
Coverage > 95% > 95%
Number of Layers 2-5 2-5
Sheet Resistance n.a. n.a.
Transfer method Wet chemical transfer Wet chemical transfer
Substrate Thickness 300 nm 250 µm
MSDS

* Other sizes available: 1 cm × 2 cm, 2 cm × 2 cm, or custom-made sizes, please contact us for more details.

 

General Description 

Hexagonal boron nitride (h-BN) few-layer film, often referred to as h-BN nanosheets (h-BNNS), has an ultra-flat surface without dangling bonds. Due to its oxidation resistance even at high temperatures (up to 1000 oC) and chemical resistance to both acids and bases, it is believed to be a better substrate than silicon.

High quality h-BN few-layer film is available on 2 different substrates: SiO2/Si and PET (polyethylene terephthalate). Different sizes and substrates of few-layer h-BN films are also available on request.

  • Glass (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
  • Sapphire (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
  • Silicon (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
  • Quartz (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
  • Copper (5 cm × 10 cm or custom-made sizes)

Applications

Due to its special chemical properties and electronic structure, h-BN often acts as an atomic flat insulating substrate, or a tunneling dielectric barrier in graphene and other 2D electronics. Like graphene, h-BN exhibits excellent mechanical flexibility, chemical and temperature stability, and high thermal conductivity. h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.

Synthesis 

High quality few-layer h-BN films were first grown directly on copper foil via the chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates using wet chemical transfer process.

Usage

h-BN few-layer film can be used in various research purposes, such as microscopic analysis, photoluminescence, and Raman spectroscopy studies. h-BN few-layer film can also be transferred to other substrates.

 

Literature and Reviews

  1. Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films, P Sutter et al., Nano Lett. 2013, 13, 276−281 (2013); DIO: 10.1021/nl304080y.
  2. High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride, H, Liu et al., Nanoscale, 10, 5559–5565 (2018); DOI: 10.1039/c7nr09438h .
  3. Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal−Organic Chemical Vapor Deposition, D. Kim et al., Cryst. Growth Des., 17, 2569−2575 (2017); DOI: 10.1021/acs.cgd.7b00107.
  4. Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets, J. Nanomater., 30429 (2015); doi: 10.1155/2015/304295.
  5. Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition, J. Liu et al., Molecules, 21, 1636 (2016); doi:10.3390/molecules21121636.
  6. Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy, APL Mater. 2, 092502 (2014); doi.org/10.1063/1.4889815.
  7. Vacuum-Ultraviolet Photodetection in Few-Layered h‑BN, W. Zheng et al., ACS Appl. Mater. Interfaces, 10, 27116−27123 (2018); DOI: 10.1021/acsami.8b07189.