Germanium Selenide Powder
|Molecular weight||151.60 g/mol|
|Bandgap||1.07 eV |
|Synonyms||Germanium (II) selenide, selanylidenegermanium|
|Classification / Family||Transition metal mono-chalcogenides (TMMCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science|
|Preparation||Synthetic - chemical vapour transport (CVT)|
|Electronic properties||2D semiconductor|
|Melting point||667 °C|
Germanium selenide (GeSe) has a puckered layer structure similar to that of black phosphorus. However, unlike BP, each germanium cation is triple-coordinated with a lone electron pair pointing to the inter-layer spacing. The lone electron pair thus is subject to inter-layer coupling to enhance the binding force between layers.
The high quality of TMDC monolayers have been mostly been fabricated by mechanical and chemical exfoliations from bulk crystals or high-purity powders. However, few-to-monolayer GeSe films with direct bandgaps are still hard to obtain by mechanical exfoliation due to the high fragility of GeSe mono-crystalline flakes. Liquid-phase exfoliation of high-purity powders is an alternative way to prepare GeSe nanosheets or nanoparticles.
Germanium selenide is a p-type semiconductor with closely-located direct and indirect band gaps in the range of 1.1 – 1.2 eV. GeSe also exhibits a high absorption coefficient of ~105 cm−1 in the visible range and a high hole mobility of 128.6 cm2 V−1 s−1, making it a promising semiconductor for electronic and opto-electronic applications (such as photovoltaics, phototransistors, thermoelectrics, and energy storage devices).
Germanium selenide powder is obtained via the CVT method, with a purity in excess of 99.995% achieved.
Germanium selenide powder is suitable for liquid chemical exfoliation to prepare GeSe nanosheets and nanoparticles down to few-layer films. GeSe powder is also used for preparation of mono-layer and few-layer films via chemical vapour deposition (CVD).
Literature and Reviews
- Electronic structure of germanium selenide investigated using ultra-violet photoelectron spectroscopy, P Mishra et al., Semicond. Sci. Technol., 30, 075001 (2015); doi:10.1088/0268-1242/30/7/075001.
- GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass, Y. Hu et al., Appl. Phys. Lett. 107, 122107 (2015); doi: 10.1063/1.4931459.
- Two-Dimensional GeSe as an Isostructural and Isoelectronic Analogue of Phosphorene: Sonication-Assisted Synthesis, Chemical Stability, and Optical Properties, Y. Ye et al., Chem. Mater., 29, 8361−8368 (2017); DOI: 10.1021/acs.chemmater.7b02784.
- Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few-Layer SnSe and GeSe, G. Shi et al., Nano Lett., 15, 6926−6931 (2015); DOI: 10.1021/acs.nanolett.5b02861.
- Band Structure and Photoelectric Characterization of GeSe Monolayers, Adv. Funct. Mater., 28, 1704855 (2018); DOI: 10.1002/adfm.201704855.
- Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity, X. Zhou et al., Adv. Sci., 5, 1800478 (2018); DOI: 10.1002/advs.201800478.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.