Gallium Selenide Powder

Order Code: M2138C1
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Product Code Quantity Price
M2138C1 500 mg £168.1
M2138C1 1 g £268.2

General Information

CAS number 12024-11-2
Chemical formula GaSe
Molecular weight 148.69 g/mol
Bandgap 2.1 eV (indirect)
Synonyms Gallium (II) selenide, Selanylidenegallium
Classification / Family Transition metal mono-chalcogenides (TMMCs), 2D semiconductor materials, Nano-electronics, Nano-photonics, Photovoltaic, Materials science

Product Details

Form Powder
Preparation Synthetic - Chemical Vapour Transport (CVT)
Purity ≥ 99.995%
Structure ‎Hexagonal
Electronic properties 2D semiconductor
Melting point 960 °C (lit.)
Appearance Dark copper powder

General Description 

2D gallium selenide (GaSe) is a layered III–VI semiconductor with well-known nonlinear optical properties. Each layer consists of covalently-bonded stacks, with top and bottom layers of Se and two layers of Ga ions in the middle. Depending on the sequence of stacking, the three most important classifications are β-GaSe, ε-GaSe, and γ-GaSe phases. Both β-GaSe and ε-GaSe are 2H hexagonal structured. 

GaSe crystals possess wide optical transparency, ranging from the wavelength of 0.65 to 18 mm. One of the most important properties of bulk GaSe is its nonlinear optical property due to the absence of an inversion symmetric center. Non-linear optics based on GaSe have been developed in many important applications such as integrated optics, optical information communications, biology, as well as imaging techniques.


With excellent electrical characteristics and high photosensitivity to visible light, exfoliated ultra-thin films of GaSe find applications in electronic and optical devices such phototransistors, FETs, LEDs, photovoltaics, optical information communications, and image mappings.

Our high-purity (>99.995%) GaSe powder enables mass production via liquid exfoliation to obtain high-quality GaSe nanosheets or nanoparticles.


Gallium selenide powder is obtained via  the CVT method, with a purity in excess of 99.995% achieved.


Gallium selenide powder is suitable for liquid chemical exfoliation to prepare GaSe nanosheets and nanoparticles down to few-layer films. GaSe powder is also used for the preparation of mono-layer and few-layer films via chemical vapour deposition (CVD).

Literature and Reviews

    1. Layer-Dependent Nonlinear Optical Properties and Stability of NonCentrosymmetric Modification in Few-Layer GaSe Sheets, Angew. Chem. Int. Ed., 54, 1185 –1189 (2015); DOI: 10.1002/anie.201409837.
    2. Investigation of Second- and Third-Harmonic Generation in Few-Layer Gallium Selenide by Multiphoton Microscopy, L. Karvonen et al., Sci. Rep., 5:10334 (2015); DOI: 10.1038/srep10334.
    3. Highly sensitive phototransistor based on GaSe nanosheets, H. Huang et al., Appl. Phys. Lett. 107, 143112 (2015); doi: 10.1063/1.4933034.
    4. Synthesis and Photoresponse of Large GaSe Atomic Layers, S Lei, et al, Nano Lett. 2013, 13, 2777−2781 (2013)l doi: 10.1021/nl4010089.
    5. Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide, C. Jung et al., ACS Nano., 9 (10), 9585-9593 (2015); dio: 10.1021/acsnano.5b04876.
    6. Shear Exfoliation and Photoresponse of 2D-Layered Gallium Selenide Nanosheets, A. Chan et al., Phys. Status Solidi RRL, 12, 1800226 (2018); DOI: 10.1002/pssr.201800226.
    7. Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaS Crystals with High Photoresponse, X. Li et al., Sci. Rep., 4:5497 (2014); DOI: 10.1038/srep05497.

Form Powder
Preparation Synthetic - chemical vapour transport (CVT)
Purity ≥ 99.995%
Structure Hexagonal (2H)
Electronic properties 2D semiconductor
Melting point 960 °C (lit.)
Appearance Dark red powder