Few-layer MoS2

Order Code: M871
MSDS sheet


(excluding Taxes)


General Information

CAS number 1317-33-5
Chemical formula MoS2
Molecular weight 160.07 g/mol
HOMO/LUMO/Bandgap HOMO = 6.39 eV, LUMO = 4.5 eV, Eg = 1.89 eV
Synonyms Molybdenum(4+) disulfide, Molybdenum sulfide
Classification / Family

2D semiconducting materials, monolayer materials, thin-layered transition-metal dichalcogenides (TMDs), n-type semiconductors

Product Details

Purity 99.9%
Number of layers 1-10
Few layer ratio 95%
Diameter 0.2~10 µm
Melting point 1,185 °C (dec. - lit.)
Density 5.06 g/cm³
Colour Black powder/granules

Chemical Structure

few layers MoS2 structure
Chemical structure of molybdenum disulfide (MoS2); CAS no. 1317-33-5.


Having an ultra thin layered structure and an appreciable direct band gap of ~1.9 eV in the monolayer regime, molybdenum disulfide (MoS2) has been one of the most studied thin-layered transition-metal dichalcogenides (TMDs) due to its abundance in nature as molybdenite.

Few-layered MoShas good potential applications in nano electronics, optoelectronics, and flexible devices with the capability of controlling spin and valley degrees of freedom. MoS2 can also be doped with phosphorus to p‑type semiconductors.

Literature and Reviews

  1. Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators, H. Jia et al., Nanoscale, 8, 10677-10685 (2016); DOI: 10.1039/C6NR01118G.
  2. Few-Layer MoS2: A Promising Layered Semiconductor, R. Ganatra et al., ACS Nano, 8 (5), pp 4074–4099 (2014); DOI: 10.1021/nn405938z.
  3. Broadband Few-Layer MoS 2 Saturable Absorbers, S. Wang et al., Adv. Mater., 26, 3538–3544 (2014); DOI: 10.1002/adma.201306322.
  4. Photoelectrochemistry of Pristine Mono- and Few-Layer MoS2, M. Velický et al., Nano Lett., 16, 2023−2032 (2016); DOI: 10.1021/acs.nanolett.5b05317.
  5. Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors, Y. Xue et al., ACS Nano, 10 (1), 573–580 (2016); DOI: 10.1021/acsnano.5b05596.
  6. Few-Layer MoS2 p‑Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation, A. Nipane, et al., ACS Nano, 10 (2), 2128–2137 (2016); DOI: 10.1021/acsnano.5b06529.