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Tin(IV) Sulfide (SnS2) Powder and Crystal


Product Code M2114C1
Price $219.00 ex. VAT

Low price, high purity 2D metal tin(IV) sulfide powder and crystals

For the development of next-generation electronics, optoelectronics, and nanotechnology


Tin(IV) sulfide (also known as tin disulfide SnS2) is a layered metal dichalcogenide semiconductor with a similar chemical and crystal structure to that of molybdenum disulfide (MoS2).  In each individual layer, Sn is sandwiched between two S layers with strong covalent bonding, whereas individual mono-layers are held by weak van der Waals forces. Individual layers break free when weak van der Waals forces are overcome by either physical or chemical exfoliation.

Like many other two dimensional semiconductors, SnS2 can undergo exfoliation to form atomic-layer sheets that have applications in FETs, photovolatic solar cells, sensors and photocatalyst applications. 

SnSis an n-type semiconducting material that has a hexagonal CdI2-type structure. 

We supply low price tin(IV) sulfide in several different forms for a range of applications.

Tin(IV) sulfide powder

Tin(iv) sulfide powder

Can be used for preparation of tin(iv) sulfide nanoplates and ultrathin films

Sold by weight

≥ 99.995% purity

From £168.00

Tin(IV) sulfide crystal by size

Tin(IV) sulfide crystal

Can be used to produce single or few-layer tin(IV) sulfide sheets via mechanical or liquid exfoliation

Small (≥10mm2) or medium (≥25mm2) crystals available*

≥ 99.999% purity

From £396.00

*Typical representative size, areas/dimensions may vary

Bulk single tin(IV) sulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. 

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Tin(IV) sulfide powder can also be used to prepare SnS2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). Cu intercalated bilayer SnS2 displays a hole field-effect mobility of ~40 cm2 V−1 s−1, and Co-SnS2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene.

Key Product Data

Structure and Properties of 2D Tin(IV) Sulfide

After exfoliation of crystals or powder, tin(IV) sulfide typically has the following properties:

  • Hexagonal (2H) structure (space group: P3m1)
  • Earth-abundant, non-toxic, and chemically stable
  • n-type semiconducting material with band-gap of 2.2–2.35 eV

Applications of Tin(IV) Sulfide

Tin(IV) sulfide single crystals can be used to prepare monolayer and few-layer SnS2 by mechanical or liquid exfoliation. Tin(IV) sulfide powder is suitable for liquid chemical exfoliation to prepare SnS2 nanosheets and nanoparticles down to few-layer films. 

With high sensitivity and high surface activity, exfoliated SnS2 single or few-layer ultra-thin films from bulk crystal and powder have also been used in applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric photovoltaic and energy storage devices such as  for applications Li-ion batteries 

Technical Data

CAS number 1315-01-1
Chemical formula SnS2
Molecular weight 182.83 g/mol
Bandgap 2.2 eV
Preparation Synthetic - Chemical Vapour Transport (CVT)
Structure Hexagonal (2H)
Electronic properties 2D CDW materials
Melting point n.a.
Colour Dark brown
Synonyms Tin Disulfide, Stannic Sulfide, Tin Sulfide (S2Sn), Mosaic Gold
Classification / Family Transition metal dichalcogenides (TMDCs), 2D semiconductor materials, NIR band-gap, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Materials Science

Product Details

Form Purity
Tin(IV) Sulfide Powder ≥ 99.995%
Tin(IV) Sulfide Crystal ≥ 99.999%

MSDS Documents

Tin disufide powder MSDSTin disulfide powder

Tin disufide crystal MSDSTin disulfide crystal

Structure of Tin(IV) Sulfide

Tin(IV) sulfide (SnS2) has a layered structure, where each Sn ion coordinates to six S ions in a regular octahedron. Each sheet of Sn atoms is sandwiched between two sheets of S atoms, and each S-Sn-S layer is held by weak van de Vaals interactions. 

SnS2 crystallises with a standard hexagonal crystal structure (2H-SnS2) which is identical to that of 1T-MoS2. Monolayers of 2H-SnS2 are stacked precisely on top of one another to form the 2H-polytype of bulk SnS2. It is noted that the 2H-SnS2 structure is different from that of 2H-MoS2, where the Mo atom possesses a trigonal prismatic coordination instead.

SnS2 crystal structure

Top and side view of single-layer tin(IV) sulfide (2H-SnS2)

Applications of Tin(IV) Sulfide

With a band-gap of 2.2–2.35 eV, hexagonal SnS2 has been used for efficient visible-light water-splitting. It is earth-abundant, non-toxic, and chemically stable in both acidic or neutral aqueous solutions. Physical or liquid exfoliated SnS2 single or few-layer ultra-thin films from bulk crystal and powder have also been used in applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric photovoltaic and energy storage devices


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Pricing Table (All)

Form Size/Weight* Product Code Price
Powder 500 mg M2114C1 £168.00
Powder 1 g M2114C1 £269.00
Crystal Small (≥ 10 mm2) M2114A10 £396.00 ea.
Crystal Medium (≥ 25 mm2) M2114A25 £637.00 ea.
Crystal Large (≥ 100 mm2) M2114A00 £1370.00 ea.

*typical representative size, areas/dimensions may vary

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Literature and Reviews

  • Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics, Y, Huang et al., ACS Nano, 8 (10), 10743–10755 (2014); DOI: 10.1021/nn504481r.
  • Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2, T. Sriv et al., Sci. Rep., 8 10194 (2018); DOI:10.1038/s41598-018-28569-6.
  • Effect of strain on electronic and magnetic properties of Fe-doped monolayer SnS2, Y. Liu et al., Phy. Lett. A, 381, 1732–1737 (2017); DIO: 10.1016/j.physleta.2017.03.034.
  • Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst, L. Burton et al., J. Mater. Chem. A, 4, 1312 (2016); DOI: 10.1039/c5ta08214e.
  • Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors, X. Zhou et al., Adv. Funct. Mater., 26, 4405–4413 (2016); DOI: 10.1002/adfm.201600318.
  • Freestanding Tin Disulfide Single‐Layers Realizing Efficient Visible‐Light Water Splitting, Y. Sun et al., Angew. Chem., 124, 8857 –8861 (2012); DOI: 10.1002/ange.201204675.
  • Two-Dimensional Tin Disulfide Nanosheets for Enhanced Sodium Storage, W. Sun et al., ACS Nano, 9 (11), 11371–11381 (2015); DOI: 10.1021/acsnano.5b05229.

To the best of our knowledge the information provided here is accurate. However, Ossila assume no liability for the accuracy of this page. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. All products are for laboratory and research and development use only, and may not be used for any other purpose including health care, pharmaceuticals, cosmetics, food or commercial applications.

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