Tin(IV) Sulfide (SnS2) Powder and Crystal

Tin(IV) sulfide (also known as tin disulfide SnS₂) is a layered metal dichalcogenide semiconductor with a similar chemical and crystal structure to that of molybdenum disulfide (MoS₂).  In each individual layer, Sn is sandwiched between two S layers with strong covalent bonding, whereas individual mono-layers are held by weak van der Waals forces. Individual layers break free when weak van der Waals forces are overcome by either physical or chemical exfoliation.

Like many other two dimensional semiconductors, SnS₂ can undergo exfoliation to form atomic-layer sheets that have applications in FETs, photovolatic solar cells, sensors and photocatalyst applications. 

SnS₂ is an n-type semiconducting material that has a hexagonal CdI₂-type structure. 

We supply low price tin(IV) sulfide in several different forms for a range of applications.

Tin(IV) Sulfide Powder

Can be used for preparation of tin(IV) sulfide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

From £220

Tin(IV) Sulfide Crystals by Size

Can be used to produce single or few-layer tin(IV) sulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) or medium (≥25 mm²) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary

Bulk single tin(IV) sulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. 

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Tin(IV) sulfide powder can also be used to prepare SnS₂ nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). Cu intercalated bilayer SnS₂ displays a hole field-effect mobility of ~40 cm² V⁻¹s⁻¹, and Co-SnS₂ exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene.

Key Product Data

• High purity, low price tin(IV) sulfide
• Available as a powder or as individual crystal
• Can be used to produce single or few-layer sheets
• Free worldwide shipping on qualifying orders

Structure of Tin(IV) Sulfide

Tin(IV) sulfide (SnS₂) has a layered structure, where each Sn ion coordinates to six S ions in a regular octahedron. Each sheet of Sn atoms is sandwiched between two sheets of S atoms, and each S-Sn-S layer is held by weak van de Vaals interactions. 

SnS₂ crystallises with a standard hexagonal crystal structure (2H-SnS₂) which is identical to that of 1T-MoS₂. Monolayers of 2H-SnS₂ are stacked precisely on top of one another to form the 2H-polytype of bulk SnS₂. It is noted that the 2H-SnS₂ structure is different from that of 2H-MoS₂, where the Mo atom possesses a trigonal prismatic coordination instead.

Properties of 2D Tin(IV) Sulfide

After exfoliation of crystals or powder, tin(IV) sulfide typically has the following properties:

• Hexagonal (2H) structure (space group: P3m1)
• Earth-abundant, non-toxic, and chemically stable
• n-type semiconducting material with band-gap of 2.2–2.35 eV

Applications of Tin(IV) Sulfide

Tin(IV) sulfide single crystals can be used to prepare monolayer and few-layer SnS₂ by mechanical or liquid exfoliation. Tin(IV) sulfide powder is suitable for liquid chemical exfoliation to prepare SnS₂ nanosheets and nanoparticles down to few-layer films. 

With high sensitivity and high surface activity, exfoliated SnS₂ single or few-layer ultra-thin films from bulk crystal and powder have also been used in applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric photovoltaic and energy storage devices such as  for applications Li-ion batteries 

With a band-gap of 2.2–2.35 eV, hexagonal SnS₂ has been used for efficient visible-light water-splitting. It is earth-abundant, non-toxic, and chemically stable in both acidic or neutral aqueous solutions. Physical or liquid exfoliated SnS₂ single or few-layer ultra-thin films from bulk crystal and powder have also been used in applications ranging from light emitters, field effect transistors (FETs), gas sensors, photodetectors, thermoelectric photovoltaic and energy storage devices

Literature and Reviews

• Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics, Y, Huang et al., ACS Nano, 8 (10), 10743–10755 (2014); DOI: 10.1021/nn504481r.
• Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2, T. Sriv et al., Sci. Rep., 8 10194 (2018); DOI:10.1038/s41598-018-28569-6.
• Effect of strain on electronic and magnetic properties of Fe-doped monolayer SnS2, Y. Liu et al., Phy. Lett. A, 381, 1732–1737 (2017); DIO: 10.1016/j.physleta.2017.03.034.
• Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst, L. Burton et al., J. Mater. Chem. A, 4, 1312 (2016); DOI: 10.1039/c5ta08214e.
• Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors, X. Zhou et al., Adv. Funct. Mater., 26, 4405–4413 (2016); DOI: 10.1002/adfm.201600318.
• Freestanding Tin Disulfide Single‐Layers Realizing Efficient Visible‐Light Water Splitting, Y. Sun et al., Angew. Chem., 124, 8857 –8861 (2012); DOI: 10.1002/ange.201204675.
• Two-Dimensional Tin Disulfide Nanosheets for Enhanced Sodium Storage, W. Sun et al., ACS Nano, 9 (11), 11371–11381 (2015); DOI: 10.1021/acsnano.5b05229.