Source-Drain Deposition Mask, High Density

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Shadow masks for deposition of source-drain contacts. Designed for use in the Evaporation Stack for High Density OFETs with our standard sized substrates of 20 x 15 mm. Each mask produces 20 OFETs on a single substrate. We sell a selection of masks for different precisions in linear and interdigitated patterns.

If you would like to mix and match geometries, please let us know when ordering.

General Mask Specifications

Mask dimensions	20 x 15 mm
Number of OFETs	20
Contact pad size	1 mm x 1 mm
Contact pitch	2.54 mm (0.1")
Mask material	Electroformed nickel
Compatible products	Evaporation stack: E311 Glass Substrates: S151 ITO substrates: S111 Silicon substrates: S146

Individual Mask Specifications

Product Code	E321	E322	E323
Channel Geometry	Linear	Linear	Interdigitated
Channel Width	1 mm	1 mm	18.23 mm
Channel Length	30 µm	30, 40, 50, 60, 80 µm (4 of each)	50 µm
Tolerance	± 7 µm	± 7 µm	± 7 µm
Mask Thickness	30 µm	30 µm	30 µm

Linear 1 mm x 30 µm (E321) and 1 mm x 30 µm variable (E322)

30 micron channel length evaporation mask (dimensions) — **Dimensioned Details**

30 micron channel length evaporation mask (single device) — **1.5x Microscope image of individual OFET**

High density linear OFET shadow mask (channel closeup) — **5x Microscope Image of individual OFET**

Linear channel length OTFT evaporation mask (30 microns) — **Optical Image of Mask**

Interdigitated 18 mm x 50 µm (E323)

Interdigitated OFET shadow mask 30 microns - single device — **1.5x Microscope image of individual OFET**

OFET interdigitated shadow mask channel close up — **5x Microscope image of individual OFET**

High density interdigitated shadow mask — **Optical image of mask**

Assembly Video

PLEASE NOTE: The magnetic sheet should now be placed on top of the lid, so that it can be taken off while the substrates are still secure in the stack, thus avoiding damage to the substrates.

This video demonstrates how to load the high density OFET stack typically used to thermally evaporate (vacuum deposit) source-drain contacts. The video shows the below steps:

Loading the interchangeable source-drain masks into the lower support (this is combined with the substrate holder).

Loading the substrate

Screwing the lid on.

Adding the magnetic sheet

Learn more and get started with high density OFETsThe high density OFET fabrication system makes it simpler and quicker to make and test a large number of devices for statistical and optimisation purposes. Find our more by viewing ourhigh density OFET overview and schematic,contact our OFET teamorbuy the high density OFET stack.

Troubleshooting

The mask is designed in such a way that during the deposition of the gate electrodes on the corner of the substrate the metal should cover the edge of the substrate as well. This ensures conductivity between the metal electrodes and the p-doped silicon. If you find the edges of the substrate not to be conductive you must scratch the edges of the substrate to remove the insulating silicon oxide in correspondence with the corner where the gate electrode will be deposited.

Prefabricated OFET: gate electrode details — Prefabricated OFET: details of the gate pad/doped silicon electrical contact.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.