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NBPhen

nbphen 1174006-43-9
Product Code M2183A1
Price $271.00 ex. VAT
$ USD

NBPhen, EIL and HBL material for OLEDs and photovoltaic devices

High-purity (>99.0%) and available online for priority dispatch

NBPhen, full name 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline, is one of the close relatives of BPhen, which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN3) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.

OLEDs utilising CsN3 -doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.

General Information

CAS number 1174006-43-9
Full name 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline
Chemical formula C44H28N2
Molecular weight 584.71 g/mol
Absorption λmax 395 nm in THF
Fluorescence λem 412 nm in THF
HOMO/LUMO HOMO = 5.8 eV, LUMO = 2.6 eV [1]
Synonyms 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
Classification / Family Phenanthroline derivatives, Organic electronics, Electron-injection layer materials (EIL), Hole-blocking layer materials (HBL), TADF materials, Sublimed materials.

Product Details

Purity Sublimed: >99% (HPLC)
Melting point TGA: >340 °C (0.5% weight loss)
Appearance Off-white powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials for OLED devices page.

Chemical Strucutre

NBPhen chemical structure
Chemical structure of NBPhen

Device Structure(s)

Device structure ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1]
Colour Yellow yellow light emitting device
Max. EQE 11.9%
Max. Current Efficiency 36.0 cd/A
Device structure ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour Orange orange light emitting device
Max. EQE 19.6%
Max. Current Efficiency 35.5 cd/A
Device structure ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour Red red light emitting device
Max. EQE 20.6%
Max. Current Efficiency 36.0 cd/A
Device structure ITO/MO3 (5 nm)/NPB (75 nm)/C545T:Alq3 (30 nm)/NBPhen (25 nm)/CsN3:NBPhen (5 nm)/Al [3]
Colour Green green light emitting device
Max. Luminance 60,000 cd/m2
Max. Current Efficiency 10.4 cd/A
Device structure ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour Yellow yellow light emitting device
Max. Power Efficiency 115.2 lm W-1
Max. EQE 25.5%
Max. Current Efficiency 80.6 cd/A
Device structure ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour Yellow yellow light emitting device
Max. Power Efficiency 102.6 lm W-1
Max. EQE 25.2%
Max. Current Efficiency 79.8 cd/A

*For chemical structure information, please refer to the cited references.

MSDS Documentation

NBPhen MSDSNBPhen MSDS sheet

Pricing

Grade Order Code Quantity Price
Sublimed (>99% purity) M2183A1 250 mg £208.00
Sublimed (>99% purity) M2183A1 500 mg £354.00
Sublimed (>99% purity) M2183A1 1 g £567.00

Literature and Reviews

  1. Highly Effcient Organic Light-Emitting Diode Using A Low Refractive Index Electron Transport Layer, A. Salehi et al., Adv. Optical Mater., 170019 (2017); DOI: 10.1002/adom.201700197.
  2. Predicting Operational Stability for Organic Light-Emitting Diodes with Exciplex Cohosts, Z, Wang et al., Adv. Sci., 6, 1802246 (2019); DOI: 10.1002/advs.201802246.
  3. The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED, X. Chu et al., Phys. Status Solidi A 211, 7, 1605–1609 (2014); DOI: 10.1002/pssa.201431090.
  4. Utilizing a Spiro TADF Moiety as a Functional Electron Donor in TADF Molecular Design toward Efficient “Multichannel” Reverse Intersystem Crossing, L. Gan et al., Adv. Funct. Mater., 29, 1808088 (2019); DOI: 10.1002/adfm.201808088.

To the best of our knowledge the information provided here is accurate. However, Ossila assume no liability for the accuracy of this page. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. All products are for laboratory and research and development use only, and may not be used for any other purpose including health care, pharmaceuticals, cosmetics, food or commercial applications.

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