NBPhen

NBPhen, EIL and HBL material for OLEDs and photovoltaic devices

High-purity (>99.0%) and available online for priority dispatch

NBPhen, full name 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline, is one of the close relatives of BPhen, which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN₃) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.

OLEDs utilising CsN₃ -doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials for OLED devices page.

Chemical Strucutre

Device Structure(s)

Device structure	ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1]
Colour	Yellow
Max. EQE	11.9%
Max. Current Efficiency	36.0 cd/A

Device structure	ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour	Orange
Max. EQE	19.6%
Max. Current Efficiency	35.5 cd/A

Device structure	ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
Colour	Red
Max. EQE	20.6%
Max. Current Efficiency	36.0 cd/A

Device structure	ITO/MO3 (5 nm)/NPB (75 nm)/C545T:Alq3 (30 nm)/NBPhen (25 nm)/CsN3:NBPhen (5 nm)/Al [3]
Colour	Green
Max. Luminance	60,000 cd/m2
Max. Current Efficiency	10.4 cd/A

Device structure	ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour	Yellow
Max. Power Efficiency	115.2 lm W-1
Max. EQE	25.5%
Max. Current Efficiency	80.6 cd/A

Device structure	ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour	Yellow
Max. Power Efficiency	102.6 lm W-1
Max. EQE	25.2%
Max. Current Efficiency	79.8 cd/A

*For chemical structure information, please refer to the cited references.

MSDS Documentation

NBPhen MSDS sheet

Pricing

Literature and Reviews

1. Highly Effcient Organic Light-Emitting Diode Using A Low Refractive Index Electron Transport Layer, A. Salehi et al., Adv. Optical Mater., 170019 (2017); DOI: 10.1002/adom.201700197.
2. Predicting Operational Stability for Organic Light-Emitting Diodes with Exciplex Cohosts, Z, Wang et al., Adv. Sci., 6, 1802246 (2019); DOI: 10.1002/advs.201802246.
3. The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED, X. Chu et al., Phys. Status Solidi A 211, 7, 1605–1609 (2014); DOI: 10.1002/pssa.201431090.
4. Utilizing a Spiro TADF Moiety as a Functional Electron Donor in TADF Molecular Design toward Efficient “Multichannel” Reverse Intersystem Crossing, L. Gan et al., Adv. Funct. Mater., 29, 1808088 (2019); DOI: 10.1002/adfm.201808088.

To the best of our knowledge the information provided here is accurate. However, Ossila assume no liability for the accuracy of this page. The values provided are typical at the time of manufacture and may vary over time and from batch to batch. All products are for laboratory and research and development use only, and may not be used for any other purpose including health care, pharmaceuticals, cosmetics, food or commercial applications.