Molybdenum Disulfide Powders and Solutions

Since the discovery of single-layer graphene in 2004, the field of 2D materials has seen several new classes of materials emerge. One of these is transition metal dichalcogenides (TMD's). These materials are comprised of one of the transition metals bound with one of the elements in Group 16. However, oxides are typically not classed as dichalcogenides. Molybdenum Disulfide (MoS2) is currently the most studied member of the TMD family, with over 2500 papers being published in 2015.

What is Molybdenum Disulfide?

Molybdenum disulfide (MoS₂) is the most famous of the single layer transition metal dichalcogenide (TMD) family. MoS₂ has been used in bulk for many years as a solid state lubricant, this is due to its low coefficient of friction in addition to its high chemical and thermal stability. Similar to graphite, when MoS₂ transitions from a bulk structure to a single layer structure the properties of this material undergo a significant change.

The most striking change that occurs when transitioning from bulk to single layer is the shift in the optoelectronic properties, with the material changing from being an indirect bandgap semiconductor with a bandgap value of approximately 1.3 eV to a direct bandgap semiconductor with a bandgap value of approximately 1.9 eV. Due to the presence of a bandgap in this material there are significantly more uses for MoS₂ in comparison to other 2d materials such as graphene.

Some areas in which MoS₂ has already been applied include high on/off ratio field effect transistors due to low leakage currents, memresistors based on layered TMD films, controllable spin and valley polarization, geometric confinement of excitons, tuneable photoluminescence, the electrolysis of water, and photovoltaics/photodetectors.

Product List

At Ossila we have a range of different Molybdenum Disulfide powders for sale, including monolayer MoS₂ (M861) and multi-layer MoS₂ (M871). These materials come packed as dry powders, ready for re-dispersion within the solvent of the user's choice. In addition , we sell pre-made solutions using M861 and M871 at concentrations of 1 mg.ml-1 and 0.1 mg.ml-1.

MSDS

Molybdenum Disulfide Powders

MSDS

Molybdenum Disulfide Solutions

Dispersion Guides

Molybdenum Disulfide can be readily dispersed in a range of different polar solvents. At Ossila, we have found that the most stable dispersion for mono-layers and multi-layers can be produced using the following recipe:

• Weigh out desired amount of material (this can go up to 1 mg.ml^-1)
• Add 1:1 ratio of ethanol to deionized water
• Shake vigorously to break up material
• A 2-hour treatment in an ultrasonic bath will homogeneously disperse the material (40 kHz, 100 W ultrasonic bath)

Technical Data

General Information

Product Images

Publications

• Electronic structure of a single MoS2 monolayer, E. S. Kadantsev et al., Sol State Commun., 152, 909–913 (2012); doi:10.1016/j.ssc.2012.02.005.
• Large-Area Epitaxial Monolayer MoS2, D. Dumcenco et al., ACS Nano, 9 (4), 4611–4620 (2015); DOI: 10.1021/acsnano.5b01281.
• Valley-selective circular dichroism of monolayer molybdenum disulphide, T. Cao et al., nat. commun., 3:887 (2012); DOI: 10.1038/ncomms1882.
• Mobility engineering and a metal–insulator transition in monolayer MoS2, B. Radisavljevic et al., Nat. Mater., 12, 815-820 (2013); DOI: 10.1038/NMAT3687.
• Light Generation and Harvesting in a van der Waals Heterostructure, O. Lopez-Sanchez et al., ACS Nano, 8 (3), 3042–3048 (2014); DOI: 10.1021/nn500480u.
• Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators, H. Jia et al., Nanoscale, 8, 10677-10685 (2016); DOI: 10.1039/C6NR01118G.
• Few-Layer MoS2: A Promising Layered Semiconductor, R. Ganatra et al., ACS Nano, 8 (5), pp 4074–4099 (2014); DOI: 10.1021/nn405938z.
• Broadband Few-Layer MoS 2 Saturable Absorbers, S. Wang et al., Adv. Mater., 26, 3538–3544 (2014); DOI: 10.1002/adma.201306322.
• Photoelectrochemistry of Pristine Mono- and Few-Layer MoS2, M. Velický et al., Nano Lett., 16, 2023−2032 (2016); DOI: 10.1021/acs.nanolett.5b05317.
• Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors, Y. Xue et al., ACS Nano, 10 (1), 573–580 (2016); DOI: 10.1021/acsnano.5b05596.
• Few-Layer MoS2 p‑Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation, A. Nipane, et al., ACS Nano, 10 (2), 2128–2137 (2016); DOI: 10.1021/acsnano.5b06529.

To the best of our knowledge, the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.