Ir(dpm)(piq)2, deep red emitting phosphorescent dopant
High-purity (>99.0%) and available online for priority dispatch
Ir(dpm)(piq)2, namely bis(phenylisoquinoline)(2,2,6,6-tetramethylheptane-3,5-dionate) iridium(III), is an iso-structure to Ir(dpm)PQ2. Ir(dpm)(piq)2 has one 2,2,6,6-tetramethylheptane-3,5-dionate with two bulky tert-butyl groups and two phenylisoquinoline ligands coordinated to the iridium core.
Ir(dpm)(piq)2 is a deep red emitting phosphorescent dopant and relatively about 30 nm red-shifted while comparing that of Ir(dpm)PQ2.
|Molecular weight||783.98 g/mol|
|Absorption||λmax 354, 479 nm (in DCM)|
|Photoluminescence||λem 628 nm (in DCM)|
|HOMO/LUMO||ET = 2.07 eV |
|Chemical name||Bis(phenylisoquinoline)(2,2,6,6-tetramethylheptane-3,5-dionate) iridium(III)|
|Synonyms||Ir(piq)2(tmd), Piq2Ir(dpm), Bis[2-(1-isoquinolinyl)phenyl](2,2,6,6-tetramethyl-3,5-heptanedionato)iridium|
|Classification / Family||Iridium Complex, Organic electronics, TADF-OLEDs, Panchromatic photoinitiating systems, Red phosphorescent dopant materials, Sublimed materials.|
|Purity||Sublimed >99.0% (HPLC)|
|Melting point||TGA > 310 °C (0.5% weight loss)|
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials for OLED devices page.
|Device structure||ITO/MoO3/TAPC/BSB:Ir(dpm)(piq)3 (4 wt%)/Eu(TTA)3Phen (0.3 wt%): Ir(dpm)(piq)3:BCBP/TPBi/LiF/Al|
|Max. Luminance||63,110 cd/m2
|Max. current Efficiency||61.71 cd/A|
|Max. Power Efficiency||64.59 Im/W|
|Sublimed (>99.0% purity)||M2310A1||100 mg||£199.00|
|Sublimed (>99.0% purity)||M2310A1||250 mg||£398.00|
|Sublimed (>99.0% purity)||M2310A1||500 mg||£699.00|
|Sublimed (>99.0% purity)||M2310A1||1 g||£1200.00|
Literature and Reviews
- Photoredox process induced polymerization reactions: Iridium complexes for panchromatic photoinitiating systems, S. Telitel et al., C. R. Chim 19, 71-78 (2016); DOI: 10.1016/j.crci.2015.06.016.
- Solution-Processed Organic Light-Emitting Diodes Using a Photo-Crosslinkable Hole-Transporting Layer, J. Park et al., J. Nanosci. Nanotechnol., 20 (8), 4661-4665(2020); DOI: 10.1166/jnn.2020.17832..
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