Gate Deposition Mask - ITO OFETs
An evaporation mask for deposition of gate contacts onto Ossila's pre-patterned ITO substrates (S161). The T-shaped aperture allows the gate to cover the interdigitated source-drain contacts while also providing easy electrical connection via the Ossila USB test board.
Mask with direct contact: For sputtering and other non-directional deposition systems, as well as for thermal deposition systems with oblique angles or a very short throw, we recommend the use of the direct contact mask to get well-defined edges.
Mask with 200 μm spacer: For normal thermal evaporation systems we recommend the use of masks with the 200 μm spacer to help avoid scratches and allow better out-gassing.
Datasheet
| Size | 75 mm x 75 mm |
| Thickness | 1.9 mm (excluding bolts) |
| Material | Stainless steel |
| Capacity | 12 substrates (S161 or S162) |
| Spacer | Optional 200 μm substrate separation spacer on one |
Lid
Substrate holder and 200 μm standoff
Gate shadow mask
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.