CAS Number 29261-33-4
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F4TCNQ, most effective p-type dopant with a deep LUMO level
High-purity (>99.0%) and available online for priority dispatch
F4TCNQ is one of the most widely used and most effective p-type dopants due to its strong electron-accepting ability and the extended π system. It has a deep LUMO level (-5.2 eV) which is energetically in the vicinity of the HOMO level of many organic semiconductors. Doping is facilitated by charge transfer from the HOMO level of the host to the LUMO of the dopant molecule. Pin devices with F4TCNQ doped 4,4',4''-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) serving as the p-doped HTL show high luminance and efficiency at extremely low operating voltages: For instance, a luminance of 1000 cd/m2 is reached at a voltage of 2.9 V .
F4TCNQ from Ossila was used in the high-impact paper (IF 18.81), High Seebeck Coefficient in Mixtures of Conjugated Polymers, G. Zuo et al., Adv. Funct. Mater., 1703280 (2017); DOI: 10.1002/adfm.201703280.
It has been reported that by controlling the doping concentration, the PCE of the PCDTBT:F4TCNQ solar cells increased from 6.41% to 7.94%, mainly due to improving the photocurrent with a F4TCNQ weight ratio of the blend lower than 0.5% . F4TCNQ is also used as the p-type dopant for graphenes [3,4].
|Molecular weight||276.15 g/mol|
|HOMO/LUMO||HOMO = 8.3 eV, LUMO = 5.2 eV|
|Classification / Family||Fluorinated compounds, p-type dopant, Strong electron acceptor, Hole-injection materials, Hole-transport layer material, OLEDs, Polymer Solar Cells, Perovskite Solar Cells, OFETs.|
|Melting point||291 °C (DSC onset)|
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.
|Device structure||ITO/m-MTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) |
|Luminance||1,000 cd/m2 at 2.9 V (high brightness at low operating voltage)|
|Max. Current Efficiency||5.27 cd/A|
|Device structure||ITO/MeO-TPD*:F4-TCNQ (100 nm)/Spiro-TAD (10 nm)/TCTA:Ir(ppy)3 (5 nm)/BPhen (10 nm)/Cs-doped BPhen (50 nm)/Al |
|Max. Power Efficiency||52 lm W−1|
|Device structure||ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al |
|Luminance@15 V||1,320 cd/m2|
|Power Efficiency@14 V||56.6 lm W−1|
|Current Efficiency@14 V||23.17 cd/A|
|Device structure||ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al |
|Luminance@ 10 mA/cm2||1,790 cd/m2|
|Power Efficiency@ 10 mA/cm2||4.65 lm W−1|
|Current Efficiency@ 10 mA/cm2||18.0 cd/A|
|Device structure||ITO/MeO-TPD: F4-TCNQ (100 nm, 4%)/NPB (15 nm)/CBP: (MPPZ)2Ir(acac) (25 nm, 8.5%)/CBP (4 nm)/CBP: DSA-ph (20 nm, 3%)/ETLs (30 nm)/LiF (1 nm)/Al (200 nm) |
|Max. Luminance||97,067 cd/m2|
|Max. Current Efficiency||42.8 cd/A|
|Max. Power Efficiency||21.1 lm W−1|
|Device structure||ITO (120 nm)/0.4 wt. % F4-TCNQ:α-NPD (35 nm)/5 wt. % BCzVBi:CBP (20 nm)/ 5 wt. % Ir(ppy)3:CBP (4 nm)/0.75 wt. % Ir(btp)2acac:CBP (12.5 nm)/BAlq (30 nm)/LiF (1 nm)/Al (150 nm) |
|Max. Luminance||106,100 cd/m2|
|Max. Current Efficiency||50.3 cd/A|
|Max. Power Efficiency||26.3 lm W−1|
|Device structure||ITO/PTAA/ CH3NH3PbI3/PCBM/C60/BCP/Ag ||ITO/PTAA:F4TCNQ (1 wt%)/CH3NH3PbI3/PCBM/C60/BCP/Ag |
|Jsc (mA cm-2)||21.6||21.6|
*For chemical structure information, please refer to the cited references.
|Sublimed (>99% purity)||M351||100 mg||£105|
|Sublimed (>99% purity)||M351||250 mg||£230|
|Sublimed (>99% purity)||M351||500 mg||£360|
|Sublimed (>99% purity)||M351||1 g||£580|
|Sublimed (>99% purity)||M351||5 g||£2400|
|Sublimed (>99% purity)||M351||10 g||£4200|
Literature and Reviews
- Low-voltage organic electroluminescent devices using pin structures, J. Huang et al., Appl. Phys. Lett. 80, 139 (2002); https://dx.doi.org/10.1063/1.1432110.
- Molecular Doping Enhances Photoconductivity in Polymer Bulk Heterojunction Solar Cells, Y. Zhang et al., Adv. Mater., 25, 7038–7044 (2013).
- Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field, X. Tian et al., J. Phys. Chem. B, 114 (35), 11377–11381 (2010).
- p-type doping of graphene with F4-TCNQ, H. Pinto et al., J. Phys.: Condens. Matter 21, 402001 (2009), stacks.iop.org/JPhysCM/21/402001.
- Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junction, G. He et al., J. Appl. Phys. 95, 5773 (2004); https://dx.doi.org/10.1063/1.1702143.
- Novel organic electron injection layer for efficient and stable organic light emitting diodes, R. Grover et al., J. Luminescence, 146, 53–56 (2014). https://dx.doi.org/10.1016/j.jlumin.2013.09.004.
- Light outcoupling efficiency enhancement in organic light emitting diodes using an organic scattering layer, R. Grover et al., Phys. Status Solidi RRL 8 (1), 81–85 (2014). DOI: 10.1002/pssr.201308133.
- Efficient single-emitting layer hybrid white organic light-emitting diodes with low efficiency roll-off, stable color and extremely high luminance, B. Liu et al., J. Ind.&Eng. Chem., 30, 85–91 (2015); https://dx.doi.org/10.1016/j.jiec.2015.05.006.
Conductive cooling in white organic light emitting diode for enhanced efficiency and life time,
P. Tyagi et al., Appl. Phys. Lett. 106, 013301 (2015); https://dx.doi.org/10.1063/1.4903800.
- Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells, Q. Wang et al., Nano Energy 15, 275–280 (2015); doi:10.1016/j.nanoen.2015.04.029.
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