Bismuth Selenide (Bi2Se3) Powders and Crystal

Bismuth selenide (Bi₂Se₃) belongs to group 15 (VA) post-transition metal trichalcogenides (TMTCs). Bi₂Se₃ is predicted to be a strong 3D topological insulator* and it has a topologically non-trivial energy gap of 0.3 eV. It has robust and simple surface state consisting of a single Dirac cone at the k = 0 Γ point in the surface Brilloiun zone.

Both the surface and bulk states of Bi₂Se₃ have a strong tendency toward n-type due to its native n-type defects such as selenium vacancies. 

High Purity

≥99.995% purity

Versitile use

Next-generation electronics, optoelectronics, and nanotechnology

Strong 3D topological insulator

energy gap of 0.3 eVe

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*Topological insulator is a class of material, in which its bulk is insulating while its surface states are conducting. Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. In topological insulator, strong spin-orbit coupling induces non-trivial surface states that are robustly protected against any time reversal perturbations, such as crystal defects and non-magnetic impurities.

We supply low price bismuth selenide in several different forms for a range of applications.

Bismuth Selenide Powder

Can be used for preparation of bismuth selenide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

From £350

Bismuth Selenide Crystals by Size

Can be used to produce single or few-layer bismuth selenide sheets via mechanical or liquid exfoliation

Small (≥10 mm²) or medium (≥25 mm²) crystals available*

≥99.999% purity

From £520

*Typical representative size, areas/dimensions may vary

Bulk single bismuth selenide crystals are most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation. Single bismuth selenide crystal or films produced from such crystals are suitable for study using atomic force microscopy or transmission electron microscopy.

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Bismuth selenide powder can also be used to prepare Bi₂Se₃ nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication).

Key Product Data

• High purity, low price bismuth selenide
• Available as a powder or as individual crystals
• Can be used to produce single or few-layer sheets
• Free worldwide shipping on qualifying orders

Structure of Bismuth Selenide

Bi₂Se₃ has anisotropic, layered structures in which five atomic layers are covalently bonded to form a quintuple layer with a thickness of ~1 nm. Each quintuple layer has the atomic arrangement with five atomic layers alternating Bi and Se in the sequence of Se-Bi-Se-Bi-Se and each primitive unit cell of Bi₂Se₃ contains five atoms. The rhombohedral crystal structure of Bi2Se3 consists of hexagonal planes of Bi and Se stacked on top of each other along the z-direction.

Quintuple layers interact weakly through van der Waals interactions.

Properties of 2D Bismuth Selenide

After exfoliation of crystals or powder, bismuth selenide typically has the following properties:

• ‎Rhombohedral structure (space group: R3m, No. 166)
• Bi₂Se₃ is predicted to be a strong 3D topological insulator
• Both the surface and bulk states of Bi₂Se₃ have a strong tendency toward n-type

Applications of Bismuth Selenide

Bismuth selenide (Bi₂Se₃) single crystals can be used to prepare monolayer and few-layer Bi₂Se₃ by mechanical or liquid exfoliation. 

Bismuth selenide powder is suitable for liquid chemical exfoliation to prepare Bi₂Se₃ nanosheets and nanoparticles down to few-layer films. Few-layer Bi₂Se₃ nanosheets can be prepared in in N-methyl-2-pyrrolidone or chitosan acetic solution.The absorption spectrum of few-layer Bi₂Se₃ is size and layer number dependent.

Bismuth selenide finds application in advanced photodetectors, magnetic devices, FETs, lasers, gas sensors, spintronics and quantum computing devices. With remarkable thermoelectric and photoelectric properties, bismuth selenide (Bi₂Se₃) is also attractive to biomedicine due to the good bioactivity and biocompatibility.

Literature and Reviews

1. Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices, H. Steinberg et al., Nano Lett., 10(12), 5032-5036 (2010); doi: 10.1021/nl1032183.
2. Two-Dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi2Se3 Nanoribbons, H. Tang et al., ACS Nano, 5(9), 7510-7516 (2011); doi: 10.1021/nn2024607.
3. Thermal Stability and Anisotropic Sublimation of Two-Dimensional Colloidal Bi2Te3 and Bi2Se3 Nanocrystals, J. Buha et al., Nano Lett., 16, 4217−4223 (2016); DOI: 10.1021/acs.nanolett.6b01116.
4. Complex band structure of topological insulator Bi2Se3, J. Betancourt et al., J. Phys.: Condens. Matter, 28 395501 (2016); doi: 10.1088/0953-8984/28/39/395501.
5. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface, H. Zhang et al., Nat. Phys., 438-442 (2009); DOI: 10.1038/NPHYS1270.
6. The Property, Preparation and Application of Topological Insulators: A Review, W. Tian et al., Materials, 10, 814 (2017); doi:10.3390/ma10070814.
7. Metabolizable Ultrathin Bi 2 Se 3 Nanosheets in Imaging-Guided Photothermal Therapy, H. Xie et al., small, 12 (30), 4136–4145 (2016); DOI: 10.1002/smll.201601050.
8. Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential, D. Kong et al., Nano Lett., 10 (6), 2245-2250 (2010); doi: 10.1021/nl101260j.
9. Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy, S. Hong et al., Nano Lett., 10(8), 3118-3122 (2010); doi: 10.1021/nl101884h.
10. Metabolizable Bi2Se3 Nanoplates: Biodistribution, Toxicity, and Uses for Cancer Radiation Therapy and Imaging, X. Zhang et al., Adv. Funct. Mater., 24 (12), 1718–1729 (2013); doi: 10.1002/adfm.201302312.
11. Band bending inversion in Bi2Se3 nanostructures, L. Veyrat et al., Nano Lett., 15(11), 7503-7507 (2015); doi: 10.1021/acs.nanolett.5b03124.
12. Solution to the hole-doping problem and tunable quantum Hall effect in Bi2Se3 thin films, J. Moon et al., Nano Lett., 18 (2), 820-826 (2018); doi: 10.1021/acs.nanolett.7b04033.