TAPC

TAPC, hole transport material for OLEDs

High hole mobility and can be used to simplify OLED structures

1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane, known as TAPC, has been widely used as a hole transport material in organic light-emitting diodes (OLEDs) due to its high hole mobility.

Having a higher E_T (2.87 eV) than the typical blue phosphorescent guest material, TAPC can be used as both hole-transport layer material and as host for blue phosphorescent (such as FIrpic) guest molecules, resulting in a reduction of the number of organic layers and simplified OLED structures.

General Information

Product Details

*For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure

Device Structure(s)

Device structure	ITO(50 nm)/PEDOT:PSS(60 nm)/TAPC(20 nm)/mCP(10 nm)/mCP:BmPyPb*:4CzIPN(25 nm)/TSPO1(35 nm)/LiF(1 nm)/Al(200 nm)   [1]
Colour	Green
Max. EQE	28.6%
Max. Power Efficiency	56.6 lm W−1

Device structure	ITO/TAPC (40 nm)/TCTA (2 nm)/26DCzPPy:TCTA:FIrpic (0.4:0.4:0.2) (5 nm)/26DCzPPy:PPT:FIrpic (0.4:0.4:0.2) (5 nm)/3TPYMB (55 nm)/CsF (2 nm)/Al (180 nm) [2]
Colour	Blue
Current Efficiency @ 1000 cd/m2	42 cd/A
Power Efficiency @ 1000 cd/m2	30 lm W−1

Device structure	ITO/TAPC:MoOx (10 nm, 15 wt.%)/TAPC(35 nm)/TcTa:Ir(BT)2(acac) (5 nm, 4 wt.%)/26DCzPPy:FIrpic (5 nm, 15 wt.%)/26DCzPPy:Ir(BT)2(acac) (5 nm, 4 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (100 nm) [3]
Colour	White
Max. EQE	13.2%
Max. Current Efficiency	35.0 cd/A
Max. Power Efficiency	30.6 lm W−1

Device structure	Si/SiO2/Al (80 nm)/MoOx: TAPC (43 nm, 15 wt.%)/TAPC (10 nm)/Ir(piq)3:TcTa (3 nm, 6%)/TcTa (2 nm)/FIrpic:26DCzPPy (5 nm, 12 wt.%)/BPhen (2 nm)/PO-01*:26DCzPPy (5 nm, 6 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (2 nm)/Cu (18 nm)/TcTa (60 nm) [4]
Colour	White
EQE @ 1000 cd/m2	10%
Current Efficiency @ 1000 cd/m2	25.6 cd/A
Power Efficiency @ 1000 cd/m2	20.1 lm W−1

Device structure	ITO (90 nm)/HATCN (5 nm)/TAPC (65 nm)/10 wt% fac -Ir(mpim)3 –doped TCTA (5 nm)/10 wt% fac -Ir(mpim)3 -doped 26DCzPPy (5 nm)/B3PyPB* (65 nm)/Liq (2 nm)/Al (80 nm) [5]
Colour	Blue
EQE @ 100 cd/m2	29.6%
Current Efficiency @ 100 cd/m2	73.2 cd/A
Power Efficiency @ 100 cd/m2	75.6 lm W−1

Device structure	ITO/TAPC (40 nm)/TcTa (10 nm)/5a* (4%):TcTa (5 nm)/5a* (4%):26DCzPPy (10 nm)/TmPyPB (40 nm)/LiF(1 nm)/Al(100 nm) [6]
Colour	Red
Max. Luminance	11,023 cd/m2
Max. Current Efficiency	17.36 cd/A
Max. Power Efficiency	14.73 lm W−1

Device structure	ITO /TAPC/(1wt% DPB:99wt%tri-PXZ-TRZ*):CBP (15:85)/LiF/Al [7]
Colour	Red
Max EQE	17.5%
Max. Power Efficiency	28 lm W−1

Device structure	ITO (180 nm)/TAPC (60 nm)/mCP:Firpic–8 wt% (10 nm)/Ir(ppz)3 (1.5 nm)/mCP:Firpic–8 wt% (10 nm)/Ir(ppz)3 (1.5 nm)/mCP:Firpic–8 wt% (10 nm)/TPBi (30 nm)/Liq (2 nm)/Al (120 nm) [8]
Colour	Blue
Luminance @ 200 cd/m2	32,570 cd/m2
Max. Current Efficiency	43.76 cd/A
Max. EQE	23.4%
Max. Power Efficiency	21.4 lm W−1

Device structure	ITO/TAPC (50 nm)/TcTa:FIrpic (7%,10 nm)/26DCzPPy:FIrpic (20%, 10 nm)/Tm3PyPB (20 nm)/Tm3PyPB:Cs (30 nm)/LiF (1 nm)/Al (120 nm) [9]
Colour	Blue
Max. EQE	20.3%
Max. Power Efficiency	36.7 lm W−1

Device structure	ITO/MoO3 (8 nm)/(NPB)(80 nm)/TAPC(5 nm)/TCTA:4 wt% Ir(MDQ)2(acac) (4 nm)/TCTA:2 wt% Ir(ppy)3 (4 nm)/43 wt% TCTA: 43 wt% 26DCzPPy: 14 wt% FIrpic (5 nm)/TmPyPb (40 nm)/LiF/Al [10]
Colour	White
Max. EQE	19.4%
Max. Current Efficiency	43.6 cd/A
Max. Power Efficiency	45.8 lm W−1

Device structure	ITO/PEDOT:PSS(40 nm)/TCTA:TAPC:FIrpic:Ir(ppy)3:Ir(MDQ)2(acac) (40nm)/TmPyPB (50 nm)/LiF (1 nm)/Al [11]
Colour	White
Max. Current Efficiency	37.1 cd/A
Max. Power Efficiency	32.1 lm W−1

Device structure	ITO/HAT-CN (10 nm)/HAT-CN:TAPc (2:1, 60 nm)/TAPc (20 nm)/TcTa:Be(pp)2:Ir(mppy)3 (1:1:8 wt% 10 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq (1 nm)/Al (1 nm)/HAT-CN (20 nm)/HAT-CN:TAPc (2:1, 10 nm)/TAPc (40 nm)/ TcTa:Be(pp)2:Ir(mppy)3 (1:1:8 wt% 10 nm)/Be(pp)2 (15 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq (1 nm)/Al (100 nm) [12]
Colour	Green
Max. Current Efficiency	241 cd/A
Max. Power Efficiency	143 lm W−1

Device structure	ITO/HAT-CN (10 nm)/TAPC (45 nm)/BCzSCN*:FIrpic:PO-01 (8 wt%, 0.5 wt%, 20 nm)/TmPyPB (50 nm)/Liq (2 nm)/Al (120 nm) [13]
Colour	Blue
Max. EQE	22%
Max. Current Efficiency	66.0 cd/A
Max. Power Efficiency	64.0 lm W−1

Device structure	ITO/HAT-CN (10 nm)/TAPC (45 nm)/mCP:Ir(dbi)3 10 wt% (20 nm)/TmPyPB (40 nm)/Liq (2 nm)/Al (120 nm) [14]
Colour	Sky Blue
Max. EQE	23.1%
Max. Current Efficiency	61.5 cd/A
Max. Power Efficiency	43.7 lm W−1

Device structure	Graphene (2–3 nm)/TAPC (30 nm)/HAT-CN (10 nm)/TAPC (30 nm)/HAT-CN (10 nm)/TAPC (30 nm)/ TCTA:FIrpic (5 nm)/DCzPPy: FIrpic (5 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [15]
Colour	Blue
Max. EQE	15.1%
Max. Power Efficiency	14.5 lm W−1

Device structure	ITO/TAPC (40 nm)/TCTA:Ir(piq)3 2 wt % (1 nm)/TCTA 46 wt %:BP4mPy 46 wt %: FIrpic 8 wt % (28 nm)/BP4mPy:Ir(piq)3 3 wt % (1 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [16]
Colour	White
Max. Luminance	19,007 cd/m2
Max EQE	11.3%
Max. Current Efficiency	15.6 cd/A
Max. Power Efficiency	16.3 lm W−1

*For chemical structure information please refer to the cited references

Pricing

MSDS Documentation

TAPC MSDS sheet

Literature and Reviews

1. Engineering of Mixed Host for High External Quantum Efficiency above 25% in Green Thermally Activated Delayed Fluorescence Device, B. Kim et al., Adv. Funct. Mater., 24, 3970–3977 (2014).
2. Blue and white phosphorescent organic light emittingdiode performance improvementbyconfining electrons and holes inside double emitting layers, Y-S.Tsai et al., J. Luminescence 153, 312–316 (2014); http://dx.doi.org/10.1016/j.jlumin.2014.03.040.
3. Color stable and low driving voltage white organic light-emitting diodes with low efficiency roll-off achieved by selective hole transport buffer layers, Z. Zhang et al., Org. Electronics 13, 2296–2300 (2012); http://dx.doi.org/10.1016/j.orgel.2012.07.001.