Perovskite Inks Top 13% (and climbing)

Posted on Fri, Jun 19, 2015 by Darren Watters

The latest fabrication run of Ossila's I101 perovskite ink have topped 13% efficiency in a standard architecture.

The device run by Alex Barrows of the University of Sheffield gave a peak efficiency of 13.1% power conversion efficiency under AM1.5G using a device stack of ITO/PEDOT:PSS/perovskite/PC70BM/Ca/Al.

The full details regarding the fabrication recipe can be found on our I101 product page.

I101 perovskite efficiency JV curve
JV curve (reverse sweep) of champion pixel without light soaking


Recipe Summary

This result was achieved using our legacy substrate with a PEDOT:PSS hole transport interlayer and I101 spun in air with a humidity of 30% rh. To achieve the perovskite layer, the PEDOT:PSS coated substrate was heated to 90°C and the perovskite precursor ink was held at 70°C during the active layer deposition stage. The perovskite film was achieved by using a spin speed of 4000 rpm for 30s with 30 μl of solution. The thin films were then thermally treated for 120 mins at 90°C (in air) before being transferred to a nitrogen glovebox. Here, a thin film of PC70BM was spin cast (1000rpm) on top of the perovskite layer. The devices were completed by thermally evaporating 5 nm of calcium followed by 100 nm of aluminium before the devices were encapsulated.