Test Chips for Graphene and 2D Materials

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Make electrical measurements easier with our prefabricated silicon test chips. Gold or platinum source-drain contacts mean you can simply deposit a flake and start measuring. A conductive back gate with 300 nm silicon oxide also allows for full transistor or field-dependent IV chracterisation while our robust contact pads and test-boards or probe station take the hassle out of making a robust electrical conection all the way to the flake. Channel width down to 2 um available.