Posted on 19 Jun 10:38
The latest fabrication run of Ossila's I101 perovskite ink have topped 13% efficiency in a standard architecture.
The device run by Alex Barrows of the University of Sheffield gave a peak efficiency of 13.1% power conversion efficiency under AM1.5G using a device stack of ITO/PEDOT:PSS/perovskite/PC70BM/Ca/Al.
The full details regarding the fabrication recipe can be found on our I101 product page.
This result was achieved using our legacy substrate with a PEDOT:PSS hole transport interlayer and I101 spun in air with a humidity of 30% rh. To achieve the perovskite layer, the PEDOT:PSS coated substrate was heated to 90°C and the perovskite precursor ink was held at 70°C during the active layer deposition stage. The perovskite film was achieved by using a spin speed of 4000 rpm for 30s with 30 μl of solution. The thin films were then thermally treated for 120 mins at 90°C (in air) before being transferred to a nitrogen glovebox. Here, a thin film of PC70BM was spin cast (1000rpm) on top of the perovskite layer. The devices were completed by thermally evaporating 5 nm of calcium followed by 100 nm of aluminium before the devices were encapsulated.