Pre-patterned ITO OFET substrates



interdigitated OFET substrates

The Ossila pre-patterned ITO OFET substrates have been designed to enable the fabrication and characterisation of transistors without the need for vacuum evaporations or probe stations. This allows devices to be produced and tested with significantly increased speed and simplicity making the system ideal for high throughput material screening experiments as well as teaching and training purposes.


Order codeQuantityPrice
S161- 50 µm channel width 100 £550
S161- variable channel width 100 £550




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Further Information

The pre-patterned OFET substrates consist of interdigitated ITO fingers to act as the source-drain contacts and have overall channel dimensions of 30mm x 50 µm. These relatively large channels mean that contact effects are minimised so that matching the energy levels of the organic semiconductor and contacts are less important. As such the intrinsic Poole Frenkel limited mobility of a material can be more easily assessed independent of the HOMO level. The 30 mm channel length also has the additional benefit of producing larger currents making testing and measurement quicker and requiring less sensitive (less expensive) equipment.

The substrate itself is made of high-quality soda-lime float glass with a 20 nm coating of SiO2 (synthetic quartz) which allows for HMDS and OTS treatments to improve mobility. The transparent nature of the ITO/glass also means that opto-electric experiments can be done with ease (photoconductivity, photo induced doping in the presence of oxygen, sensing).

Transistors can be fabricated simply by depositing an organic semiconductor, gate insulator and gate on the substrates (see diagram below for device schematic). By using a synthetic metal (such as PEDOT:PSS) deposited from solution for the gate it is possible to make fully functioning OFETs by solution processing alone and eliminate vacuum evaporation processes. The use of the Ossila OFET test board also means that devices can be measured at the flick of a switch without the need for probe stations.

While all solution based processing allows transistors to be fabricated in a matter of minutes, the substrates are also designed to work with a wide variety of different material systems and deposition techniques. As such, vacuum deposited semiconductors, gate insulators and gates can also be used with the appropriate shadow mask.




50 µm channel width substrate dimensions
dimensions of inderdigitated substrate
Variable channel width substrate dimensions
dimensions of variable interdigitated substrate








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