Ossila OFET Fabrication Systems

Ossila provides a range of OFET fabrication systems to fulfil a variety of research needs. All our systems are based upon a standardised substrate size and mask holder to minimise costs and simplify your laboratory. A variety of substrates are available including silicon/silicon oxide, quartz coated glass and patterned/unpatterned ITO. We also provide a wide range of deposition masks for maximum flexibility of device design including source-drain masks, gate masks, active area masks and gate insulator masks.

We can also provide fully fabricated substrates complete with optional OTS treatment to make producing devices as simple as spinning on the semiconductor.

We're always happy to help so if you have any questions about our products or need assistance in choosing the right fabrication system for your research needs then please contact us.

Low Density OFET Fabrication System

Designed for maximum experimental versatility and ease of handling. Intended for use by scientists wanting to perform a wide variety of experiments on new types of devices. Also good for teaching and training purposes.

Five OFETs per substrate
All device geometries possible (top/bottom gates and top/bottom source-drain)
Compatible with the Ossila OFET test board to eliminate probe stations
Channel dimensions of 30 um x 1mm and above are available

High Density OFET Fabrication System

For maximum statistical data and device optimisation. Designed for scientists and engineers looking to perform materials screening, optimise performance or undertake process engineering.

Twenty OFETs per substrate
All device geometries possible (top/bottom gates and top/bottom source-drain)
Interdigitated source-drain electrodes devices available
Mix and match OFET geometries within the same evaporation
Channel dimensions of 30 um x 1mm and above are available for linear masks and 50 um x 20 mm for interdigitated

Evaporation Free OFET Fabrication System

Pre-patterned transparent ITO source-drain electrodes that allows fabrication of bottom-contact top-gate devices within minutes and without the need for thermal evaporation. Large channel dimensions of 50 um x 30 mm also reduce contact effects making them ideal for device screening, while the compatibility with the Ossila OFET test board eliminates the need for probe stations. Also great for opto-electronic experiments which require optical access from both sides.

Five OFETs per substrate
Pre-patterned ITO source-drain electrodes
Compatible with the Ossila OFET test board
Channel dimensions of 50 um x 30mm and above are available

standard pre-patterned ITO - standard width

standard pre-patterned ITO - variable width

Long Channel Width Fabrication System

For increased signal to noise ratio on linear devices. Our first ever OFET fabrication system, now being used in over 38 institutions in 21 countries around the world. Features the longest manufactured linear channels of 4 mm for increased current.

Six OFETs per substrate
All device geometries possible (top/bottom gates and top/bottom contacts)
Channel dimensions of 30 um x 4 mm and above are available

Long channel width device - source-drain

Prefabricated Substrates

Prefabricated substrates to make testing materials quick and simple and get the highest possible mobilities from new materials. Thermally evaporated gold or platinum electrodes on a silicon substrate with 300 nm silicon oxide gate dielectric. Optional OTS treatment makes device fabrication a one step process of spinning on your semiconductor. Optional photolithographic patterning allows for extra small features with high width/length ratios available. Fabricated to order for your research needs.