PBTTT

Poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) known as PBTTT and also as PBTTT-C14. Now in stock for immediate dispatch. Produced by Merck KGaA under the Lisicon® brand.

PBTTT has an increased mobility, stability, backbone rigidity and crystallinity compared to P3HT [1] and has demonstrated hole mobilities as high as 1 cm2/Vs [2]. Combined with good solubility in a range of common solvents this makes it possible to achieve high performance using a number of different coating techniques with mobilities as high as 0.1 cm2/Vs having been achieved with inkjet printing[3].

However, the advantages of PBTTT are not just better mobility and stability but also the opportunity for new and interesting science related to

Liquid crystal behaviour [1]
Large crystal domains with easily identifiable boundaries[4]
Molecular terracing [5]
Anisotropic behaviour in the ribbon phase[6]
Luttinger liquid behaviour [7]

Product Code	Quantity	Price
M141	100mg	�499

References (please note that Ossila has no formal connection to any of the authors or institutions in these references):

[1] Liquid-crystalline semiconducting polymers with high charge-carrier mobility. I. McCulloch et al., Nature materials, V 5, P328 (2006).
[2] Undoped Polythiophene field-effect transistors with a mobility of 1 cm2 V-1 S-1. B.H.Hamadani et al., Applied Physics letters, V91, P243512 (2007).
[3] Ink-jet printed p-type polymer electronics based on liquid-crystalline polymer semiconductors. M. Baklar et al., Journal of Materials Chemistry, V20, P1927 (2010).
[4] In-Plane Liquid Crystalline Texture of High-Performance Thienothiophene Copolymer Thin Films. X. Zhang et al. Advanced Functional Materials, V20, P4098 (2010).
[5] Anisotropy of Charge Transport in a Uniaxially Aligned and Chain-Extended, High-Mobility, Conjugated Polymer Semiconductor. M. J. Lee et al., Advanced Functional Materials, V21, P932 (2011).
[6] Controlling the Orientation of Terraced Nanoscale "Ribbons" of a Poly(thiophene) Semiconductor. D. M. DeLongchamp et al., ACSNano, V3, P780 (2009).
[7] Nonlinear transport in semiconducting polymers at high carrier densities. J. D. Yuen, Nature Materials, V8, P572 (2009).

Other products you may be interested in...


OFET Source/Drain evaporation stack	SiO2 OFET substrates	OFET Shadow masks

Printable HTML
MSDS

Datasheet

Poly(2,5-bis(3-tetradecyllthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT)

Cas no: 888491-19-8
PBTTT

Solubility of PBTTT

The recommend solvent is 1,2-Dichlorobenzene (10 mg/mL @ 80�C). You can use alternative solvents such as Tetralin, Decalin or Indan but it should be noted that these solvents will require heating to 80�C. Gelation can occur on cooloing the solution. This is a reversible process and the solution can be restored on heating.

Absorption(max, thin film): 550nm
DSC (2nd Heat Cycle/Peak): T1 110�C T2 220�C

Electrical properties of PBTTT

Field effect mobility (Max): 1.0 x 10�� cm�/V.s
On/Off Ratio (Max): 10^7
Vo: ~20V (with SiO2 dielectric)
Ionisation energy: - 5.1 eV

This data represents typical values obtained from Mercks own device configuration. The ionisation energy was measured using a Riken-AC2 spectrophotometer.

Storage and stability of PBTTT

Solid Polymer

Storage: Store in the dark under an inert atmosphere
Temperature: Can be heated to 180�C without degradation

Processed Film Stability of PBTTT

Storage: Store in the dark under an inert atmosphere
Thermal stability: Stable up to 190�C under an inert atmosphere
Atmospheric stability: For the best results measurements and processing should be carried out under an inert atmosphere.

Deposition of PBTTT from a warm solution gives highly uniform films.

Processing example Bottom Gate Field Effect Transistor

Structure: Bottom Gate	Material	Process
Substrate	n-doped silicon/silicon dioxide (230mn) as gate dielectric with Au electrodes (using ITO adhesion layer)	Substrate cleaning: Sonicated in water Sonicated in acetone Sonicated in IPA Ozone treated
Surface treatment layer	OTS	Treatment is necessary to enhance transistor properties OTS - 10mM in tulene with ~150 ppm water Immerse substrate in the OTS solution for 20 min at 60�C
OSC	PBTTT	10 mg/mL solution in 1,2-dichlorobenzene used Spin at 3000 rpm, with 1 s acceleration, for 3 min Anneal at 100�C for 10 min Processing under inert atmosphere is advised

Typical Values: �=1.0 x 10^-1 cm�/V.s; On/Off=10^7

Processing example Top Gate Field Effect Transistor

Structure: Top Gate	Material	Process
Substrate	PEN	Substrate cleaning: Sonicated in methanol 1 min then dried
Source/Drain	Au	Deposit to ~30nm thickness
Contacts SAM	M001	Cover substrate for 1 min before spinning Spin at 500 rpm for 18 sec Rinse with IPA
OSC	PBTTT	5 mg/mL solution in 1,2-dichlorobenzene Spin at 3000rpm for 2 min Anneal at 100�C for 1 min with cover Processing in yellow light is advised
Dielectric	D139-FC43-045	Spin at 500rpm for 10 s with 3 s acceleration Final spin speed at 1000rp for 20 s with 3 s acceleration Baked in oven at 100�C for 20 min Approx. thickness of 500nm
Gate	Au	Deposit to ~30nm thickness

Typical Values: �=4.0 x 10^-2 cm�/V.s; On/Off=10^4