Top Gate Shadow Mask
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The OFET gate shadow mask is designed for thermal evaporation of gates either above or below the source-drain contacts on Ossila's standard OFET substrates (20mm x 15 mm). The substrates are kept away from direct contact with the mask by use of a 200 µm standoff which prevents damage to delicate polymer layers and allows evaporation of any residual solvents while in vacuum chambers. | ||||||
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| Printable HTML | Datasheet |
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The mask can be used in conjunction with the source drain evaporation stack and linear/interdigitated shadow masks to produce all four types of OFET:
• top-gate/bottom contact
• top-gate/top contact
• bottom-gate/bottom contact
• bottom-gate/top contact
OFET gate shadow mask dimensions
Details:
| Outer dimensions: | 75mm x 75mm x 1.4 mm |
| Capacity: | 12 substrates each of 20mm x 15mm |
| Material: | Steel |
Compatible components:
| Source drain evaporation stack: | E191 |
| Source drain masks: | E201, E211 |
| Substrates: | S111, S141 |
Dimensions(left) and schematic (right) of the substrate system including source-drain contacts.
Lid
Substrate holder and 200 µm standoff
Gate shadow mask
Close up of the assembled mask (without lid) showing the standoff.
Schematic (left) Photo (right)
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.
OLED/OPV components
PCDTBT, P3HT, PCBM and PEDOT:PSS.
OFET components
OLED/OPV overview
OFET overview
