Shadow Mask - Interdigitated
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An OFET shadow mask with interdigitated 40 μm channels for maximising channel length and increasing statistical data. Contains 72 identical OFETs arranged into groups of six. Designed for use in the Ossila source/drain evaporation stack (E191) but can also be used separately.
Number of OFETs: 72 (6 per standard S111 substrate). Channel width: 40 μm Channel length: 11.2 mm Source-drain electrode size: 4 mm x 2 mm Mask material: hard electroformed nickel Mask thickness: 35 μm Channel bar tolerance: ±8 μm
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An OFET shadow mask with interdigitated 40 µm channels for maximising channel length and increasing statistical data. Contains 72 identical OFETs arranged into groups of six. Designed for use in the Ossila source/drain evaporation stack (E191) but can also be used separately. |
| Number of OFETs | 72 (6 per standard Ossila substrate). |
| Channel widths | 40 µm |
| Channel length | 11.2 mm |
| Source-drain electrode size | 4 mm x 2 mm |
| Mask material | hard electroformed nickel |
| Mask thickness | 35 µm |
| Channel bar tolerance | ±8 µm |
| Optical image of the full shadow mask (left) is designed to fit in the Ossila source-drain evaporation stack. |
Please note that due to the fine nature of the source-drain channel bars some slight warping may occur for the interdigitated design as shown below. This is unavoidable given the dimension of this component (11.2 mm long by just 40 um wide) but does not affect overall OFET performance since the length and width of the channel remains almost identical.
Channel widths (dimensions in mm). Each OFET has a channel width of 40 µm and a length of 11.2 mm.
Overall mask (dimensions in mm)
OFET source/drain evaporation stack
Lid
Holds the substrates and magnetic sheet in position
Magnetic sheet
Pulls the shadow mask into contact with the substrate - even upside down
Substrates
Up to twelve substrates per mask (sold separately)
Upper support
Holds and aligns the substrates in position above the shadow mask
Shadow mask
Interchangeable shadow masks with varying designs. Six OFETs per substrate
Lower support
Provides mechanical support to the thin and flexible shadow masks
The Ossila OFET source drain evaporation stack (sold separately).
The interdigitated shadow mask is designed to fit into the evaporation stack alongside our ITO/glass and SiO2/Si to make a rapid fabrication system for bottom gate / bottom contact OFETs. Please see overview for full details.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.
OLED/OPV components
PCDTBT, P3HT, PCBM and PEDOT:PSS.
OFET components
OLED/OPV overview
OFET overview
