An OFET shadow mask designed for use in our standard substrate system, but which can also be used on wafers or cut into sections for use on different sized substrates. Contains 72 OFETs arranged into groups of six - each of which contains a 30 μm, 40 μm, 50 μm, 60 μm, 80 μm and 100 μm channel so that contact resistance can be eliminated. Linear (straight) channels. Designed for use in the Ossila source/drain evaporation stack (E191) but can also be used separately.
An OFET shadow mask designed for use in our standard substrate system, but which can also be used on wafers or cut into sections for use on different sized substrates. Contains 72 OFETs with linear (straight) channels arranged into groups of six - each of which contains a 30 µm, 40 µm, 50 µm, 60 µm, 80 µm and 100 µm channel width so that contact resistance can be calibrated. Designed for use in the Ossila source/drain evaporation stack (E191) but can also be used separately.
Number of OFETs
72 (6 per standard S111 substrate).
Channel widths
30, 40, 50, 60, 80, 100 µm (one each per substrate)
Channel Length
4 mm
Source-drain electrode size
4 mm x 2 mm
Mask material
hard electroformed nickel
Mask thickness
35 µm
Channel bar tolerance
±8 µm
Optical image of the full shadow mask (left) is designed to fit in the Ossila source-drain evaporation stack.
A section of six OFETs cut from the overall mask using a sturdy pair of scissors for standalone use.
Channel lengths (dimensions in mm). Each group of six masks has channel lengths of 30, 40, 50, 60, 80 & 100 µm
Overall mask (dimensions in mm)
OFET source/drain evaporation stack
Lid Holds the substrates and magnetic sheet in position
Magnetic sheet Pulls the shadow mask into contact with the substrate - even upside down
Substrates Up to twelve substrates per mask (sold separately)
Upper support Holds and aligns the substrates in position above the shadow mask
Shadow mask Interchangeable shadow masks with varying designs. Six OFETs per substrate
Lower support Provides mechanical support to the thin and flexible shadow masks
The Ossila OFET source drain evaporation stack (sold separately).
The linear shadow mask is designed to fit into the evaporation stack alongside our ITO/glass and SiO2/Si to make a rapid fabrication system for bottom gate / bottom contact OFETs.
Please see overview for full details.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.
OLED/OPV components
PCDTBT, P3HT, PCBM and PEDOT:PSS.
OFET components
OLED/OPV overview
OFET overview
